丝印：C3M0045065K；Package：TO247-4；Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode

Features • C3MTM SiC MOSFET technology • Optimized package with separate driver source pin • 8mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) •

文件：1.08343 Mbytes 页数：12 Pages

WOLFSPEED

丝印：C3M0045065K；Package：TO247-4；Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode

Features • C3MTM SiC MOSFET technology • Optimized package with separate driver source pin • 8mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) •

文件：1.08343 Mbytes 页数：12 Pages

WOLFSPEED

丝印：TO247-4；Package：TO247-4；Silicon Carbide Power MOSFET

文件：1.08429 Mbytes 页数：12 Pages

Cree

科锐

SiC N-Channel MOSFET

FEATURES ·High Speed Switching with Low Capacitances ·High Blocking Voltage with Low On-Resistance ·Easy to Parallel and Simple to Drive APPLICATIONS ·Solar Inverters ·UPS ·SMPS ·Motor drives

文件：361.56 Kbytes 页数：3 Pages

ISC

无锡固电