丝印：C3M0032120J1；Package：TO-263-7LXL；Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode

Features • 3rd generation SiC MOSFET technology • Optimized package with separate driver source pin • 8mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery

文件：964.82 Kbytes 页数：11 Pages

WOLFSPEED

丝印：C3M0032120J1；Package：TO-263-7L-XL；Silicon Carbide Power MOSFET

文件：965.68 Kbytes 页数：11 Pages

Cree

科锐

丝印：C3M0032120J1；Package：TO-263-7LXL；Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode

Features • 3rd generation SiC MOSFET technology • Optimized package with separate driver source pin • 8mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery

文件：964.82 Kbytes 页数：11 Pages

WOLFSPEED

丝印：C3M0032120J1；Package：TO-263-7L-XL；Silicon Carbide Power MOSFET

文件：965.68 Kbytes 页数：11 Pages

Cree

科锐