丝印：C3M0032120K；Package：TO247-4；Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode

Features • 3rd generation SiC MOSFET technology • Optimized package with separate driver source pin • 8mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery

文件：1.98226 Mbytes 页数：12 Pages

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丝印：C3M0032120K；Package：TO247-4；Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode

Features • 3rd generation SiC MOSFET technology • Optimized package with separate driver source pin • 8mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery

文件：1.98226 Mbytes 页数：12 Pages

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SiC N-Channel MOSFET

FEATURES ·High Blocking Voltage with Low On-Resistance ·RDS(ON)= 43mΩ（TYP.）@VGS=15V Tj=25℃ ·High Speed Switching with Low Capacitance ·Easy to Parallel and Simple to Drive APPLICATIONS ·Solar Inverters ·Switch Mode Power Supplies ·DC-DC Converters ·Motor drives

文件：785.94 Kbytes 页数：8 Pages

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Silicon Carbide Power MOSFET N-Channel Enhancement Mode

Features • Optimized package with separate driver source pin • Lower profile TO-247-4 package body • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant Typical Appl

文件：1.12647 Mbytes 页数：13 Pages

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