Silicon Carbide Power MOSFET N-Channel Enhancement Mode

Features • Optimized package with separate driver source pin • Lower profile TO-247-4 package body • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant Typical Appl

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分立式碳化硅肖特基二极管

1200 V, 32 mΩ, TO-247-4 LP package, Industrial qualified, Discrete SiC MOSFET • Stable RDS(ON) over temperature\n• Extremely fast switching\n• Reduction of heat-sink requirements;

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