丝印：C3M0025065K；Package：TO247-4；Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode

Features • C3MTM SiC MOSFET technology • Optimized package with separate driver source pin • 8mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) •

文件：1.15453 Mbytes 页数：13 Pages

WOLFSPEED

丝印：C3M0025065K；Package：TO247-4；Silicon Carbide Power MOSFET

文件：1.13293 Mbytes 页数：12 Pages

Cree

科锐

丝印：C3M0025065K；Package：TO247-4；Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode

Features • C3MTM SiC MOSFET technology • Optimized package with separate driver source pin • 8mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) •

文件：1.15453 Mbytes 页数：13 Pages

WOLFSPEED

丝印：C3M0025065K；Package：TO247-4；Silicon Carbide Power MOSFET

文件：1.13293 Mbytes 页数：12 Pages

Cree

科锐

isc N-Channel MOSFET Transistor

FEATURES Drain Current -ID=97A@ TC=25℃ Drain Source Voltage -VDSS=650V(Min) Static Drain-Source On-Resistance -RDS(on) = 34mΩ(Max)@VGS= 15V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：412.67 Kbytes 页数：3 Pages

ISC

无锡固电

SiC N-Channel MOSFET

FEATURES ·High Speed Switching with Low Capacitances ·High Blocking Voltage with Low On-Resistance ·Easy to Parallel and Simple to Drive APPLICATIONS ·Solar Inverters ·Switch Mode Power Supplies ·High-voltage Capacitive Loads ·Motor drives

文件：361.55 Kbytes 页数：3 Pages

ISC

无锡固电