丝印：C3M0016120K；Package：TO247-4；Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode

Features • 3rd generation SiC MOSFET technology • Optimized package with separate driver source pin • 8mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery

文件：1.06209 Mbytes 页数：12 Pages

WOLFSPEED

丝印：C3M0016120K；Package：TO247-4；Silicon Carbide Power MOSFET C3MTM MOSFET Technology

文件：1.06295 Mbytes 页数：12 Pages

Cree

科锐

丝印：C3M0016120K；Package：TO247-4；Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode

Features • 3rd generation SiC MOSFET technology • Optimized package with separate driver source pin • 8mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery

文件：1.06209 Mbytes 页数：12 Pages

WOLFSPEED

丝印：C3M0016120K；Package：TO247-4；Silicon Carbide Power MOSFET C3MTM MOSFET Technology

文件：1.06295 Mbytes 页数：12 Pages

Cree

科锐