丝印：C3M0021120K；Package：TO247-4；Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode

Features • 3rd generation SiC MOSFET technology • Optimized package with separate driver source pin • 8mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery

文件：664.49 Kbytes 页数：12 Pages

WOLFSPEED

丝印：C3M0021120K；Package：TO247-4；Silicon Carbide Power MOSFET C3MTM MOSFET Technology

文件：926.42 Kbytes 页数：11 Pages

Cree

科锐

丝印：C3M0021120K；Package：TO247-4；Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode

Features • 3rd generation SiC MOSFET technology • Optimized package with separate driver source pin • 8mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery

文件：664.49 Kbytes 页数：12 Pages

WOLFSPEED

丝印：C3M0021120K；Package：TO247-4；Silicon Carbide Power MOSFET C3MTM MOSFET Technology

文件：926.42 Kbytes 页数：11 Pages

Cree

科锐

SiC N-Channel MOSFET

FEATURES ·High Blocking Voltage with Low On-Resistance ·RDS(ON)= 28.8mΩ@VGS=15V Tj=25℃ ·Low Capacitance ·Avalanche Ruggedness APPLICATIONS ·Solar Inverters ·Switch Mode Power Supplies ·High Voltage DC-DC Converters ·Battery Chargers

文件：489.85 Kbytes 页数：4 Pages

ISC

无锡固电