NPN Silicon RF Transistor

Low Noise Silicon Bipolar RF Transistor • For low current applications • Minimum noise figure NFmin = 1.25 dB at 1.8 GHz Outstanding Gms = 22.5 dB at 1.8 GHz • Transition frequency fT = 25 GHz • Pb-free (RoHS compliant) and halogen-free thin small flat package (1.4 x 0.8 x 0.59 mm) wit

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NPN Silicon RF Transistor

Low Noise Silicon Bipolar RF Transistor • Low current device suitable e.g. for handhelds • For high frequency oscillators e.g. DRO for LNB • For ISM band applications like Automatic Meter Reading, Sensors etc. • Transit frequency fT = 25 GHz • Pb-free (RoHS compliant) and halogen-free pa

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丝印：AMs；Package：SOT-343；NPN Silicon RF Transistor

Low Noise Silicon Bipolar RF Transistor • For high gain and low noise amplifiers • Minimum noise figure NFmin = 1.1 dB at 1.8 GHz Outstanding Gms = 21 dB at 1.8 GHz • For oscillators up to 10 GHz • Transition frequency fT = 25 GHz • Pb-free (RoHS compliant) and halogen-free package with visib

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NPN Silicon RF Transistor (For high gain low noise amplifiers For oscillators up to 10 GHz)

NPN Silicon RF Transistor • For high gain low noise amplifiers • For oscillators up to 10 GHz • Noise figure F = 1.05 dB at 1.8 GHz outstanding Gms = 20 dB at 1.8 GHz • Transition frequency fT = 25 GHz • Gold metalization for high reliability • SIEGET® 25 - Line Siemens Grounded Emitter

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NPN Silicon RF Transistor

NPN Silicon RF Transistor • For high gain low noise amplifiers • For oscillators up to 10 GHz • Noise figure F = 1.1 dB at 1.8 GHz outstanding Gms = 21 dB at 1.8 GHz • Transition frequency fT = 25 GHz • Gold metallization for high reliability • SIEGET  25 GHz fT - Line • Pb-free (RoHS

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NPN Silicon RF Transistor

Product Brief The BFP420F is a low noise wideband NPN bipolar RF transistor. The collector design supports voltages up to VCEO = 4.5 V and currents up to IC = 60 mA. The device is especially suited for mobile applications in which low power consumption is a key requirement. The typical transition

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For high gain low noise amplifiers

NPN Silicon RF Transistor • For high gain low noise amplifiers • For oscillators up to 10 GHz • Noise figure F = 1.1 dB at 1.8 GHz outstanding Gms = 21 dB at 1.8 GHz • Transition frequency fT = 25 GHz • Gold metallization for high reliability • SIEGET  25 GHz fT - Line • Pb-free (RoHS

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isc Silicon NPN RF Transistor

DESCRIPTION • High Power Gain • High Current Gain Bandwidth Product • Low Noise Figure • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for use in RF wideband amplifiers and oscillators.

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ISC

无锡固电

NPN Silicon RF Transistor (For medium power amplifiers)

NPN Silicon RF Transistor • For medium power amplifiers • Compression point P-1dB = +19 dBm at 1.8 GHz maximum available gain Gma = 14 dB at 1.8 GHz Noise figure F = 1.25 dB at 1.8 GHz • Transition frequency fT = 24 GHz • Gold metalization for high reliability • SIEGET ® 25 - Line

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西门子

丝印：ANs；Package：SOT-343；NPN Silicon RF Transistor

Product Brief The BFP450 is a high linearity wideband NPN bipolar RF transistor. The collector design supports voltages up to VCEO = 4.5 V and currents up to IC = 170 mA. With its high linearity at currents as low as 50 mA the device supports energy efficient designs. The typical transition frequ

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