NPN Silicon Germanium RF Transistor

Product Brief The BFP740 is a linear very low noise wideband NPN bipolar RF transistor. The device is based on Infineon’s reliable high volume silicon germanium carbon (SiGe:C) heterojunction bipolar technology. The collector design supports voltages up to VCEO = 4.0 V and currents up to IC = 45

文件：38.66 Kbytes 页数：4 Pages

INFINEON

英飞凌

NPN Transistors

■ Features ● High gain ultra low noise RF transistor ● High maximum stable gain ● Gold metallization for extra high reliability ● 150 GHz fT-Silicon Germanium technology ● Outstanding noise figure F = 0.5 dB at 1.8 GHz Outstanding noise figure F = 0.85 dB at 6 GHz

文件：1.78828 Mbytes 页数：6 Pages

KEXIN

科信电子

NPN Silicon Germanium RF Transist

NPN Silicon Germanium RF Transistor • High gain ultra low noise RF transistor • Provides outstanding performance for a wide range of wireless applications up to 10 GHz and more • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.5 dB at 1.8 GHz Outstanding noise

文件：147.89 Kbytes 页数：10 Pages

INFINEON

英飞凌

NPN Silicon Germanium RF Transistor

NPN Silicon Germanium RF Transistor • High gain ultra low noise RF transistor • Provides outstanding performance for a wide range of wireless applications up to 10 GHz and more • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.5 dB at 1.8 GHz Outstanding noise

文件：157.87 Kbytes 页数：10 Pages

INFINEON

英飞凌

NPN Silicon Germanium RF Transist

NPN Silicon Germanium RF Transistor • High gain ultra low noise RF transistor • Provides outstanding performance for a wide range of wireless applications up to 10 GHz and more • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.5 dB at 1.8 GHz Outstanding noise

文件：147.89 Kbytes 页数：10 Pages

INFINEON

英飞凌

Robust High Performance Low Noise Bipolar RF Transistor

Product Brief The BFP740FESD is a very low noise wideband NPN bipolar RF transistor. The device is based on Infineon’s reliable high volume silicon germanium carbon (SiGe:C) heterojunction bipolar technology. The collector design supports voltages up to VCEO = 4.2 V and currents up to IC = 45 mA.

文件：1.93887 Mbytes 页数：29 Pages

INFINEON

英飞凌

High Linearity Low Noise SiGe:C NPN RF Transistor

Product Brief The BFP750 is a wideband linear low noise NPN bipolar RF transistor. The device is based on Infineons reliable high volume silicon germanium carbon (SiGe:C) heterojunction bipolar technology. The collector design supports voltages up to VCEO = 4 V and currents up to IC = 120 mA. Wit

文件：1.8587 Mbytes 页数：27 Pages

INFINEON

英飞凌

丝印：FA；Package：SOT-143；Silicon NPN Planar RF Transistor

Features • Small feedback capacitance • Low noise figure • High transition frequency • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications    RF amplifier up to 2 GHz, especially for mobile telephone.

文件：152.79 Kbytes 页数：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

NPN Silicon RF Transistor (For low-noise amplifiers up to 2GHz at collector currents from 0.5 mA to 20 mA.)

NPN Silicon RF Transistor • For low-noise amplifiers up to 2GHz at collector currents from 0.5 mA to 20 mA.

文件：59.96 Kbytes 页数：7 Pages

SIEMENS

西门子

Silicon NPN Planar RF Transistor

Features ● High power gain ● Low noise figure ● High transition frequency Applications    RF amplifier up to GHz range, especially for wide band antenna amplifiers.

文件：173.78 Kbytes 页数：10 Pages

VISHAYVishay Siliconix

威世威世科技公司