High Linearity Silicon Germanium Bipolar RF Transistor

Product Brief The BFP650 is a high linearity wideband NPN bipolar RF transistor. The device is based on Infineon’s reliable high volume silicon germanium carbon (SiGe:C) heterojunction bipolar technology. The collector design supports voltages up to VCEO = 4 V and currents up to IC = 150 mA. With

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INFINEON

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NPN Silicon Germanium RF Transistor

NPN Silicon Germanium RF Transistor Preliminary data • For high power amplifiers • Ideal for low phase noise oscilators • Maxim. available Gain Gma = 21 dB at 1.8 GHz Noise figure F = 0.9 dB at 1.8 GHz • Gold metallization for high reliability • 70 GHz fT- Silicon Germanium technology.

文件：191.16 Kbytes 页数：6 Pages

INFINEON

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NPN Silicon Germanium RF Transistor

Linear Low Noise SiGe:C Bipolar RF Transistor • For medium power amplifiers and driver stages • Based on Infineon s reliable high volume Silicon Germanium technology • High OIP3 and P-1dB • Ideal for low phase noise oscilators • Maxim. available Gain G ma = 21.5 dB at 1.8 GHz Mini

文件：129.99 Kbytes 页数：7 Pages

INFINEON

英飞凌

High Linearity Silicon Germanium Bipolar RF Transistor

Product Brief The BFP650 is a high linearity wideband NPN bipolar RF transistor. The device is based on Infineon’s reliable high volume silicon germanium carbon (SiGe:C) heterojunction bipolar technology. The collector design supports voltages up to VCEO = 4 V and currents up to IC = 150 mA. With

文件：1.51515 Mbytes 页数：29 Pages

INFINEON

英飞凌

丝印：67；Package：SOT143；Silicon NPN Planar RF Transistor

Features • Small feedback capacitance • Low noise figure • High transition frequency • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications    Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and assoc

文件：208.91 Kbytes 页数：13 Pages

VISHAYVishay Siliconix

威世威世科技公司

丝印：67R；Package：SOT143R；Silicon NPN Planar RF Transistor

Features • Small feedback capacitance • Low noise figure • High transition frequency • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications    Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and assoc

文件：208.91 Kbytes 页数：13 Pages

VISHAYVishay Siliconix

威世威世科技公司

丝印：W67；Package：SOT343；Silicon NPN Planar RF Transistor

Features • Small feedback capacitance • Low noise figure • High transition frequency • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications    Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and assoc

文件：208.91 Kbytes 页数：13 Pages

VISHAYVishay Siliconix

威世威世科技公司

C Heterojunction Wideband RF Bipolar Transistor

Product Brief The BFP720 is a very low noise wideband NPN bipolar RF transistor. The device is based on Infineon’s reliable high volume silicon germanium carbon (SiGe:C) heterojunction bipolar technology. The collector design supports voltages up to VCEO = 4 V and currents up to IC = 25 mA. The d

文件：1.84071 Mbytes 页数：26 Pages

INFINEON

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Robust High Performance Low Noise Bipolar RF Transistor

Product Brief The BFP720ESD is a Silicon Germanium Carbon (SiGe:C) NPN Heterojunction wideband Bipolar RF Transistor (HBT) in a plastic dual emitter standard package with visible leads. The device is fitted with internal protection circuits, which enhance robustness against ESD and high RF input

文件：1.88516 Mbytes 页数：29 Pages

INFINEON

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C Heterojunction Wideband RF Bipolar Transistor

Product Brief The BFP720F is a very low noise wideband NPN bipolar RF transistor. The device is based on Infineon’s reliable high volume silicon germanium carbon (SiGe:C) heterojunction bipolar technology. The collector design supports voltages up to VCEO = 4.0 V and currents up to IC = 25 mA. Th

文件：1.96386 Mbytes 页数：26 Pages

INFINEON

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