NPN Silicon Transistors (High breakdown voltage l Low collector-emitter saturation voltage)

NPN Silicon Transistors with High Reverse Voltage ●High breakdown voltage ●Low collector-emitter saturation voltage ●Low capacitance ●Complementary types: BFP 23, BFP 26 (PNP)

文件：171.3 Kbytes 页数：4 Pages

SIEMENS

西门子

NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems)

NPN Silicon RF Transistor • For low noise, low-power amplifiers in mobile communication systems (pager, cordless telephone) at collector currents from 0.2mA to 8mA • fT = 7,5GHz F = 1.5dB at 900MHz

文件：59.99 Kbytes 页数：7 Pages

SIEMENS

西门子

Silicon NPN Planar RF Transistor

Applications    For low noise and high gain broadband amplifiers at collector currents from 0.2 mA to 8 mA.

文件：93.41 Kbytes 页数：6 Pages

VISHAYVishay Siliconix

威世威世科技公司

Silicon NPN Planar RF Transistor

Applications    For low noise and high gain broadband amplifiers at collector currents from 0.2 mA to 8 mA.

文件：93.41 Kbytes 页数：6 Pages

VISHAYVishay Siliconix

威世威世科技公司

Silicon NPN Planar RF Transistor

Applications    For low noise and high gain broadband amplifiers at collector currents from 0.2 mA to 8 mA.

文件：93.41 Kbytes 页数：6 Pages

VISHAYVishay Siliconix

威世威世科技公司

NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems)

NPN Silicon RF Transistor • For low noise, low-power amplifiers in mobile communication systems (pager, cordless telephone) at collector currents from 0.2mA to 8mA • fT = 7,5GHz F = 1.5dB at 900MHz

文件：59.57 Kbytes 页数：7 Pages

SIEMENS

西门子

NPN Silicon RF Transistor

NPN Silicon RF Transistor Preliminary data • Low voltage/ low current operation • For low noise amplifiers • For Oscillators up to 3.5 GHz and Pout > 10 dBm • Low noise figure: 1.0 dB at 1.8 GHz

文件：99.48 Kbytes 页数：4 Pages

INFINEON

英飞凌

NPN Silicon RF Transistor

NPN Silicon RF Transistor Preliminary data • Low voltage/ low current operation • For low noise amplifiers • For Oscillators up to 3.5 GHz and Pout > 10 dBm • Low noise figure: 1.0 dB at 1.8 GHz

文件：99.48 Kbytes 页数：4 Pages

INFINEON

英飞凌

NPN Silicon RF Transistor

Low Noise Silicon Bipolar RF Transistor • For low current applications • For oscillators up to 12 GHz • Minimum noise figure NFmin = 1.25 dB at 1.8 GHz Outstanding Gms = 23 dB at 1.8 GHz • Pb-free (RoHS compliant) and halogen-free package with visible leads • Qualification report acco

文件：83.59 Kbytes 页数：7 Pages

INFINEON

英飞凌

NPN Silicon RF Transistor (For low current applications For oscillators up to 12 GHz)

NPN Silicon RF Transistor • For low current applications • For oscillators up to 12 GHz • Noise figure F = 1.15 dB at 1.8 GHz outstanding Gms = 22 dB at 1.8 GHz • Transition frequency fT = 25 GHz • Gold metalization for high reliability • SIEGET® 25 - Line Siemens Grounded Emitter Tr

文件：49.22 Kbytes 页数：8 Pages

SIEMENS

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