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BFP181R

NPN Silicon RF Transistor

NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA • fT = 8 GHz F = 1.45 dB at 900 MHz

文件:88.12 Kbytes 页数:7 Pages

INFINEON

英飞凌

BFP181T

Silicon NPN Planar RF Transistor

Features • Low noise figure • High power gain • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC    and WEEE 2002/96/EC Applications    For low noise and high gain broadband amplifiers at    collector currents from 0.5 mA to 12 mA.

文件:266.17 Kbytes 页数:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

BFP181TRW

Silicon NPN Planar RF Transistor

Features • Low noise figure • High power gain • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC    and WEEE 2002/96/EC Applications    For low noise and high gain broadband amplifiers at    collector currents from 0.5 mA to 12 mA.

文件:266.17 Kbytes 页数:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

BFP181TW

Silicon NPN Planar RF Transistor

Features • Low noise figure • High power gain • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC    and WEEE 2002/96/EC Applications    For low noise and high gain broadband amplifiers at    collector currents from 0.5 mA to 12 mA.

文件:266.17 Kbytes 页数:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

BFP181W

NPN Silicon RF Transistor

NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA • fT = 8GHz F = 1.45dB at 900MHz

文件:118.27 Kbytes 页数:7 Pages

INFINEON

英飞凌

BFP181W

NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA)

NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA • fT = 8GHz F = 1.45dB at 900MHz

文件:59.86 Kbytes 页数:7 Pages

SIEMENS

西门子

BFP182

NPN Silicon RF Transistor

NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA • fT = 8 GHz, F = 0.9 dB at 900 MHz • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 * Short term description

文件:78.93 Kbytes 页数:7 Pages

INFINEON

英飞凌

BFP182

NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA)

NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • fT = 8GHz F = 1.2dB at 900MHz

文件:60.08 Kbytes 页数:7 Pages

SIEMENS

西门子

BFP182R

NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA)

NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • fT = 8GHz F = 1.2dB at 900MHz

文件:58 Kbytes 页数:7 Pages

SIEMENS

西门子

BFP182R

NPN Silicon RF Transistor

Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA • fT = 8 GHz, NFmin = 0.9 dB at 900 MHz • Pb-free (RoHS compliant) package • Qualification report according to AEC-Q101 available

文件:87.74 Kbytes 页数:7 Pages

INFINEON

英飞凌

产品属性

  • 产品编号:

    1.5SMBJ36CA

  • 制造商:

    Bourns Inc.

  • 类别:

    电路保护 > TVS - 二极管

  • 系列:

    1.5SMBJ

  • 包装:

    卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带

  • 类型:

    齐纳

  • 电压 - 反向断态(典型值):

    36V

  • 电压 - 击穿(最小值):

    40V

  • 不同 Ipp 时电压 - 箝位(最大值):

    58.1V

  • 电流 - 峰值脉冲 (10/1000µs):

    25.9A

  • 功率 - 峰值脉冲:

    1500W(1.5kW)

  • 电源线路保护:

  • 应用:

    通用

  • 工作温度:

    -55°C ~ 150°C(TJ)

  • 安装类型:

    表面贴装型

  • 封装/外壳:

    DO-214AA,SMB

  • 供应商器件封装:

    SMB(DO-214AA)

  • 描述:

    DIO TVS VRWM 36V 1500W BIDIR SMB

供应商型号品牌批号封装库存备注价格
24+
N/A
54000
一级代理-主营优势-实惠价格-不悔选择
询价
BOURNS
25+
SMB(DO-214AA)
18746
样件支持,可原厂排单订货!
询价
Bourns
25+
N/A
18798
正规渠道,免费送样。支持账期,BOM一站式配齐
询价
BOURNS
24+
con
35960
查现货到京北通宇商城
询价
LITTEIFUSE
2121+
SMB
360000
上传都是百分之百进口原装现货
询价
更多BFP供应商 更新时间2026-1-17 11:06:00