NPN Silicon RF Transistor

Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA • fT = 8 GHz, NFmin = 0.9 dB at 900 MHz • Pb-free (RoHS compliant) package • Qualification report according to AEC-Q101 available

文件：87.74 Kbytes 页数：7 Pages

Infineon

英飞凌

NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA)

NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • fT = 8GHz F = 1.2dB at 900MHz

文件：58 Kbytes 页数：7 Pages

SIEMENS

西门子

Low Noise Silicon Bipolar RF Transistor

文件：556.5 Kbytes 页数：6 Pages

Infineon

英飞凌

NPN Silicon RF Transistor

文件：144.86 Kbytes 页数：7 Pages

Infineon

英飞凌

NPN Silicon RF Transistor

文件：144.86 Kbytes 页数：7 Pages

Infineon

英飞凌

Low Noise Silicon Bipolar RF Transistor

文件：556.5 Kbytes 页数：6 Pages

Infineon

英飞凌

低噪声硅晶体管，频率高达2.5 GHz

NPN Silicon RF Transistor for low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA ·For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA\n ·fT = 8 GHz, F = 0.9 dB at 900 MHz\n ·Pb-free (RoHS compliant) package\n ·Qualification report according to AEC-Q101 available;

Infineon

英飞凌

Package：SOT-143R；包装：托盘 类别：分立半导体产品 晶体管 - 双极（BJT）- 射频 描述：RF TRANS NPN 12V 8GHZ SOT143R-4

Infineon

英飞凌