BFP181R

NPN Silicon RF Transistor

NPNSiliconRFTransistor •Forlownoise,high-gainbroadbandamplifiersat collectorcurrentsfrom0.5mAto12mA •fT=8GHz F=1.45dBat900MHz

BFP181T

Silicon NPN Planar RF Transistor

Features •Lownoisefigure •Highpowergain •Lead(Pb)-freecomponent •ComponentinaccordancetoRoHS2002/95/EC   andWEEE2002/96/EC Applications   Forlownoiseandhighgainbroadbandamplifiersat   collectorcurrentsfrom0.5mAto12mA.

BFP181TRW

Silicon NPN Planar RF Transistor

Features •Lownoisefigure •Highpowergain •Lead(Pb)-freecomponent •ComponentinaccordancetoRoHS2002/95/EC   andWEEE2002/96/EC Applications   Forlownoiseandhighgainbroadbandamplifiersat   collectorcurrentsfrom0.5mAto12mA.

BFP181TW

Silicon NPN Planar RF Transistor

Features •Lownoisefigure •Highpowergain •Lead(Pb)-freecomponent •ComponentinaccordancetoRoHS2002/95/EC   andWEEE2002/96/EC Applications   Forlownoiseandhighgainbroadbandamplifiersat   collectorcurrentsfrom0.5mAto12mA.

BFP181W

NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA)

NPNSiliconRFTransistor •Forlownoise,high-gainbroadbandamplifiersat collectorcurrentsfrom0.5mAto12mA •fT=8GHz F=1.45dBat900MHz

BFP181W

NPN Silicon RF Transistor

NPNSiliconRFTransistor •Forlownoise,high-gainbroadbandamplifiersat collectorcurrentsfrom0.5mAto12mA •fT=8GHz F=1.45dBat900MHz

BFP182

NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA)

NPNSiliconRFTransistor •Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom1mAto20mA •fT=8GHz F=1.2dBat900MHz

BFP182

NPN Silicon RF Transistor

NPNSiliconRFTransistor* •Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom1mAto20mA •fT=8GHz,F=0.9dBat900MHz •Pb-free(RoHScompliant)package1) •QualifiedaccordingAECQ101 *Shorttermdescription

BFP182R

NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA)

NPNSiliconRFTransistor •Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom1mAto20mA •fT=8GHz F=1.2dBat900MHz

BFP182R

NPN Silicon RF Transistor

LowNoiseSiliconBipolarRFTransistor •Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom1mAto20mA •fT=8GHz,NFmin=0.9dBat900MHz •Pb-free(RoHScompliant)package •QualificationreportaccordingtoAEC-Q101available