BFP405F

NPN Silicon RF Transistor

LowNoiseSiliconBipolarRFTransistor •Forlowcurrentapplications •MinimumnoisefigureNFmin=1.25dBat1.8GHz OutstandingGms=22.5dBat1.8GHz •TransitionfrequencyfT=25GHz •Pb-free(RoHScompliant)andhalogen-freethinsmall flatpackage(1.4x0.8x0.59mm)wit

BFP410

NPN Silicon RF Transistor

LowNoiseSiliconBipolarRFTransistor •Lowcurrentdevicesuitablee.g.forhandhelds •Forhighfrequencyoscillatorse.g.DROforLNB •ForISMbandapplicationslike AutomaticMeterReading,Sensorsetc. •TransitfrequencyfT=25GHz •Pb-free(RoHScompliant)andhalogen-freepa

BFP420

NPN Silicon RF Transistor (For high gain low noise amplifiers For oscillators up to 10 GHz)

NPNSiliconRFTransistor •Forhighgainlownoiseamplifiers •Foroscillatorsupto10GHz •NoisefigureF=1.05dBat1.8GHzoutstandingGms=20dBat1.8GHz •TransitionfrequencyfT=25GHz •Goldmetalizationforhighreliability •SIEGET®25-Line SiemensGroundedEmitter

BFP420

Marking：AMs；Package：SOT-343；NPN Silicon RF Transistor

LowNoiseSiliconBipolarRFTransistor •Forhighgainandlownoiseamplifiers •MinimumnoisefigureNFmin=1.1dBat1.8GHzOutstandingGms=21dBat1.8GHz •Foroscillatorsupto10GHz •TransitionfrequencyfT=25GHz •Pb-free(RoHScompliant)andhalogen-freepackagewithvisib

BFP420E6327

NPN Silicon RF Transistor

NPNSiliconRFTransistor •Forhighgainlownoiseamplifiers •Foroscillatorsupto10GHz •NoisefigureF=1.1dBat1.8GHz outstandingGms=21dBat1.8GHz •TransitionfrequencyfT=25GHz •Goldmetallizationforhighreliability •SIEGET25GHzfT-Line •Pb-free(RoHS

BFP420F

NPN Silicon RF Transistor

ProductBrief TheBFP420FisalownoisewidebandNPNbipolarRFtransistor.ThecollectordesignsupportsvoltagesuptoVCEO=4.5VandcurrentsuptoIC=60mA.Thedeviceisespeciallysuitedformobileapplicationsinwhichlowpowerconsumptionisakeyrequirement.Thetypicaltransition

BFP420H6327

For high gain low noise amplifiers

NPNSiliconRFTransistor •Forhighgainlownoiseamplifiers •Foroscillatorsupto10GHz •NoisefigureF=1.1dBat1.8GHz outstandingGms=21dBat1.8GHz •TransitionfrequencyfT=25GHz •Goldmetallizationforhighreliability •SIEGET25GHzfT-Line •Pb-free(RoHS

BFP420W

isc Silicon NPN RF Transistor

DESCRIPTION •HighPowerGain •HighCurrentGainBandwidthProduct •LowNoiseFigure •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS •DesignedforuseinRFwidebandamplifiersandoscillators.

BFP450

NPN Silicon RF Transistor (For medium power amplifiers)

NPNSiliconRFTransistor •Formediumpoweramplifiers •CompressionpointP-1dB=+19dBmat1.8GHz maximumavailablegainGma=14dBat1.8GHz NoisefigureF=1.25dBat1.8GHz •TransitionfrequencyfT=24GHz •Goldmetalizationforhighreliability •SIEGET®25-Line

BFP450

Marking：ANs；Package：SOT-343；NPN Silicon RF Transistor

ProductBrief TheBFP450isahighlinearitywidebandNPNbipolarRFtransistor.ThecollectordesignsupportsvoltagesuptoVCEO=4.5VandcurrentsuptoIC=170mA.Withitshighlinearityatcurrentsaslowas50mAthedevicesupportsenergyefficientdesigns.Thetypicaltransitionfrequ