NPN Silicon RF Transistor

NPN Silicon RF Transistor* • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers • fT = 8 GHz, F = 1 dB at 900 MHz • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 * Short term description

文件：75.36 Kbytes 页数：7 Pages

INFINEON

英飞凌

Low Noise Silicon Bipolar RF Transistor

Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers • fT = 8 GHz, NFmin = 1 dB at 900 MHz • Pb-free (RoHS compliant) package • Qualification report according to AEC-Q101 available

文件：537.35 Kbytes 页数：6 Pages

INFINEON

英飞凌

PNP Silicon RF Transistor (For low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents)

PNP Silicon RF Transistor ● For low distortion broadband amplifier in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20 mA to 80 mA

文件：60.65 Kbytes 页数：7 Pages

SIEMENS

西门子

NPN Silicon RF Transistor

NPN Silicon RF Transistor* • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20 mA to 80 mA • Power amplifier for DECT and PCN systems • fT = 7.5 GHz, F = 1.3 dB at 900 MHz • Pb-free (RoHS comp

文件：79.39 Kbytes 页数：7 Pages

INFINEON

英飞凌

NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna and telecommunications)

• For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 20mA to 80mA • Power amplifier for DECT and PCN systems • fT = 7.5GHz F = 1.5 dB at 900MHz

文件：60.94 Kbytes 页数：7 Pages

SIEMENS

西门子

NPN Silicon RF Transistor(For low noise, low distortion broadband amplifiers in antenna and telecommunications)

NPN Silicon RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 20mA to 80mA • Power amplifier for DECT and PCN systems • fT = 7.5GHz F = 1.5 dB at 900MHz

文件：60.52 Kbytes 页数：7 Pages

SIEMENS

西门子

NPN Silicon RF Transistor

NPN Silicon RF Transistor* • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20 mA to 80 mA • Power amplifier for DECT and PCN systems • fT = 7.5 GHz, F = 1.3 dB at 900 MHz • Pb-free (RoHS comp

文件：79.27 Kbytes 页数：7 Pages

INFINEON

英飞凌

isc Silicon NPN RF Transistor

DESCRIPTION • Low Noise Figure NF = 1.3 dB TYP. @VCE = 6 V, IC = 5 mA, f = 1GHz • High Gain ︱ S21︱ 2 = 18dB TYP. @VCE= 6 V,IC = 30 mA,f = 1GHz • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for use in low noise

文件：281.25 Kbytes 页数：2 Pages

ISC

无锡固电

Low noise silicon bipolar RF transistor

Product description • NPN silicon planar epitaxial transistor in 4-pin dual-emitter SOT343 package for low noise and low distortion wideband amplifiers. This RF transistor benefits from Infineon long-term experience in RF components and combines ease-of-use to stable volumes production, at benchm

文件：644.65 Kbytes 页数：19 Pages

INFINEON

英飞凌

NPN Silicon Transistors (High breakdown voltage l Low collector-emitter saturation voltage)

NPN Silicon Transistors with High Reverse Voltage ●High breakdown voltage ●Low collector-emitter saturation voltage ●Low capacitance ●Complementary types: BFP 23, BFP 26 (PNP)

文件：171.3 Kbytes 页数：4 Pages

SIEMENS

西门子