NPN Silicon RF Transistor

NPN Silicon RF Transistor* • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20 mA to 80 mA • Power amplifier for DECT and PCN systems • fT = 7.5 GHz, F = 1.3 dB at 900 MHz • Pb-free (RoHS comp

文件：79.27 Kbytes 页数：7 Pages

INFINEON

英飞凌

isc Silicon NPN RF Transistor

DESCRIPTION • Low Noise Figure NF = 1.3 dB TYP. @VCE = 6 V, IC = 5 mA, f = 1GHz • High Gain ︱ S21︱ 2 = 18dB TYP. @VCE= 6 V,IC = 30 mA,f = 1GHz • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for use in low noise

文件：281.25 Kbytes 页数：2 Pages

ISC

无锡固电

NPN Silicon RF Transistor(For low noise, low distortion broadband amplifiers in antenna and telecommunications)

NPN Silicon RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 20mA to 80mA • Power amplifier for DECT and PCN systems • fT = 7.5GHz F = 1.5 dB at 900MHz

文件：60.52 Kbytes 页数：7 Pages

SIEMENS

西门子

NPN Silicon RF Transistor

文件：83.26 Kbytes 页数：7 Pages

INFINEON

英飞凌

Low Noise Silicon Bipolar RF Transistor

文件：552.02 Kbytes 页数：6 Pages

INFINEON

英飞凌

Low noise silicon bipolar RF transistor

Product description • NPN silicon planar epitaxial transistor in 4-pin dual-emitter SOT343 package for low noise and low distortion wideband amplifiers. This RF transistor benefits from Infineon long-term experience in RF components and combines ease-of-use to stable volumes production, at benchm

文件：644.65 Kbytes 页数：19 Pages

INFINEON

英飞凌

NPN Silicon RF Transistor

文件：83.26 Kbytes 页数：7 Pages

INFINEON

英飞凌

Low Noise Silicon Bipolar RF Transistor

文件：552.02 Kbytes 页数：6 Pages

INFINEON

英飞凌

高线性度RF 管基

NPN硅射频晶体管 • 适用于天线和电信系统中低噪声、低失真宽带放大器，频率高达 1.5 GHz，集电极电流为 20 mA 至 80 mA\n• fT = 7.5 GHz，F = 1.3 dB @ 900 MHz\n• 无铅（符合 RoHS 标准）封装;

Infineon

英飞凌

高线性度RF 管基

NPN 硅平面外延晶体管，采用 4 引脚双发射极 SOT343 封装，适用于低噪声和低失真宽带放大器。该射频晶体管受益于英飞凌在射频元件领域的长期经验，结合了易用性和稳定的批量生产，具有基准质量和可靠性。 • 适用于高压应用，VCE < 12 V\n• 转换频率 fT = 7.5 GHz\n• 易于使用，无铅（符合 RoHS 标准）和无卤素行业\n• 带可见引线的标准 SOT343 封装;

Infineon

英飞凌