BFP196W数据手册分立半导体产品的晶体管-双极（BJT）-射频规格书PDF

描述 Description

NPN Silicon RF Transistor

特性 Features

·For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20 mA to 80 mA
·Power amplifier for DECT and PCN systems
·fT = 7.5 GHz, F = 1.3 dB at 900 MHz
·Pb-free (RoHS compliant) package
·Qualification report according to AEC-Q101 available

应用 Application

·Wireless Communications
·LNA in RF Front-end
·For various applications like cellular and cordless phones, DECT, Tuners, FM, and RF modems.

简介

BFP196W属于分立半导体产品的晶体管-双极（BJT）-射频。由制造生产的BFP196W晶体管 - 双极（BJT）- 射频双极型射频晶体管是一种具有三个端子的半导体器件，用于在涉及射频的设备中开关或放大信号。双极结型晶体管设计为 NPN 或 PNP，特征参数包括晶体管类型、集射极击穿电压、跃迁频率、噪声系数、增益、功率、DC 电流增益和集电极电流。