BFP196WN数据手册分立半导体产品的晶体管-双极（BJT）-射频规格书PDF

描述 Description

NPN silicon planar epitaxial transistor in 4-pin dual-emitter SOT343 package for low noise and low distortion wideband amplifiers. This RF transistor benefits from Infineon long-term experience in RF components and combines ease-of-use to stable volumes production, at benchmark quality and reliability.

特性 Features

·For high voltage applications VCE < 12 V
·Maximal power Ptot = 700 mW
·Transition frequency fT = 7.5 GHz
·Noise figure NFmin = 1.3 dB at 900 MHz
·Easy to use Pb-free (RoHS compliant) and halogen-free industry
·standard SOT343 package with visible leads

应用 Application

·GNSS active antenna
·Amplifiers in antenna and telecommunications systems
·CATV
·Power amplifier for DECT and PCN systems

简介

BFP196WN属于分立半导体产品的晶体管-双极（BJT）-射频。由制造生产的BFP196WN晶体管 - 双极（BJT）- 射频双极型射频晶体管是一种具有三个端子的半导体器件，用于在涉及射频的设备中开关或放大信号。双极结型晶体管设计为 NPN 或 PNP，特征参数包括晶体管类型、集射极击穿电压、跃迁频率、噪声系数、增益、功率、DC 电流增益和集电极电流。