NPN Silicon RF Transistor

NPN Silicon RF Transistor* • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20 mA to 80 mA • Power amplifier for DECT and PCN systems • fT = 7.5 GHz, F = 1.3 dB at 900 MHz • Pb-free (RoHS comp

文件：79.39 Kbytes 页数：7 Pages

INFINEON

英飞凌

NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna and telecommunications)

• For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 20mA to 80mA • Power amplifier for DECT and PCN systems • fT = 7.5GHz F = 1.5 dB at 900MHz

文件：60.94 Kbytes 页数：7 Pages

SIEMENS

西门子

NPN Silicon RF Transistor

文件：79.52 Kbytes 页数：7 Pages

INFINEON

英飞凌

Low Noise Silicon Bipolar RF Transistor

文件：557.21 Kbytes 页数：6 Pages

INFINEON

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高线性度RF 管基

NPN硅射频晶体管 • 适用于天线和电信系统中低噪声、低失真宽带放大器，频率高达 1.5 GHz，集电极电流为 20 mA 至 80 mA\n• fT = 7.5 GHz，F = 1.3 dB @ 900 MHz\n• 无铅（符合 RoHS 标准）封装;

Infineon

英飞凌

Trans RF BJT NPN 12V 0.1A Automotive 4-Pin(3+Tab) SOT-143

NJS

新泽西半导体

NPN Silicon RF Transistor(For low noise, low distortion broadband amplifiers in antenna and telecommunications)

NPN Silicon RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 20mA to 80mA • Power amplifier for DECT and PCN systems • fT = 7.5GHz F = 1.5 dB at 900MHz

文件：60.52 Kbytes 页数：7 Pages

SIEMENS

西门子

isc Silicon NPN RF Transistor

DESCRIPTION • Low Noise Figure NF = 1.3 dB TYP. @VCE = 6 V, IC = 5 mA, f = 1GHz • High Gain ︱ S21︱ 2 = 18dB TYP. @VCE= 6 V,IC = 30 mA,f = 1GHz • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for use in low noise

文件：281.25 Kbytes 页数：2 Pages

ISC

无锡固电

NPN Silicon RF Transistor

NPN Silicon RF Transistor* • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20 mA to 80 mA • Power amplifier for DECT and PCN systems • fT = 7.5 GHz, F = 1.3 dB at 900 MHz • Pb-free (RoHS comp

文件：79.27 Kbytes 页数：7 Pages

INFINEON

英飞凌

Low noise silicon bipolar RF transistor

Product description • NPN silicon planar epitaxial transistor in 4-pin dual-emitter SOT343 package for low noise and low distortion wideband amplifiers. This RF transistor benefits from Infineon long-term experience in RF components and combines ease-of-use to stable volumes production, at benchm

文件：644.65 Kbytes 页数：19 Pages

INFINEON

英飞凌