High Linearity Silicon Bipolar RF Transistor

Product Brief The BFP450 is a high linearity wideband NPN bipolar RF transistor. The collector design supports voltages up to VCEO = 4.5 V and currents up to IC = 170 mA. With its high linearity at currents as low as 50 mA the device supports energy efficient designs. The typical transition frequ

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INFINEON

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NPN Silicon RF Transistor

Product description The BFP460 is a low noise device based on a grounded emitter (SIEGET™) that is part of Infineon’s established fourth generation RF bipolar transistor family. Its transition frequency fT of 22 GHz, low current and high robustness characteristics make the device suitable for amp

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NPN Silicon RF Transistor

NPN Silicon RF Transistor • General purpose low noise amplifier for low voltage, low current applications • High ESD robustness, typical 1500V (HBM) • Low minimum noise figure 1.1 dB at 1.8 GHz • High linearity: output compression point OP1dB = 13 dBm @ 3V, 35mA, 1.8GHz • Easy to use standard

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INFINEON

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NPN Silicon RF Transistor

NPN Silicon RF Transistor • General purpose low noise amplifier for low voltage, low current applications • High ESD robustness, typical 1500V (HBM) • Low minimum noise figure 1.1 dB at 1.8 GHz • High linearity: output compression point OP1dB = 13 dBm @ 3V, 35mA, 1.8GHz • Easy to use standard

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NPN Silicon RF Transistor (Q62702-F1721)

NPN Silicon RF Transistor Preliminary data • For high power amplifiers • Compression point P-1dB = 26.5 dBm at 1.8 GHz maxim. available Gain Gma = 9.5 dB at 1.8 GHz • Transition frequency fT > 17 GHz • Gold metalization for high reliability • SIEGET® 25 - Line Siemens Grounded Emitte

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SIEMENS

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TRANZYSTORY NPN

[UNITRA CEMI] TRANZYSTORY NPN

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TRANZYSTORY NPN

[UNITRA CEMI] TRANZYSTORY NPN

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ETCList of Unclassifed Manufacturers

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NPN Silicon RF Transistor (For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V)

NPN Silicon RF Transistor Preliminary data • For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V Outstanding Ga = 20 dB Noise Figure F = 0.95 dB • For oscillators up to 15 GHz • Transition frequency fT = 45 GHz • Gold metalization for high reliability • SIEGET ® 45 - Line

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SIEMENS

西门子

丝印：APs；Package：SOT-343；NPN Silicon RF Transistor

Low Noise Silicon Bipolar RF Transistor • Low noise amplifier designed for low voltage applications, ideal for 1.2 V or 1.8 V supply voltage • Common e.g. in cordless phones, satellite receivers and oscillators up to 22 GHz • High gain and low noise at high frequencies due to high transit frequ

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INFINEON

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NPN Silicon RF Transistor

Product description The BFP520F is a low noise device based on a grounded emitter (SIEGET™) that is part of Infineon’s established fifth generation RF bipolar transistor family. Its transition frequency fT of 45 GHz, high gain and low noise make the device suitable for applications up to 15 GHz.

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