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BFP620FH7764

NPN Silicon Germanium RF Transistor

NPNSiliconGermaniumRFTransistor* •HighgainlownoiseRFtransistor •Smallpackage1.4x0.8x0.59mm •OutstandingnoisefigureF=0.7dBat1.8GHz OutstandingnoisefigureF=1.3dBat6GHz •Maximumstablegain Gms=21dBat1.8GHz Gma=10dBat6GHz •Goldmetal

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

BFP640

NPN Silicon Germanium RF Transistor

NPNSiliconGermaniumRFTransistor •HighgainlownoiseRFtransistor •Providesoutstandingperformance forawiderangeofwirelessapplications •IdealforCDMAandWLANapplications •OutstandingnoisefigureF=0.65dBat1.8GHz OutstandingnoisefigureF=1.2dBat6GHz •

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

BFP640

NPN Silicon Germanium RF Transistor

NPNSiliconGermaniumRFTransistor •HighgainlownoiseRFtransistor •Providesoutstandingperformance forawiderangeofwirelessapplications •IdealforCDMAandWLANapplications •OutstandingnoisefigureF=0.65dBat1.8GHz OutstandingnoisefigureF=1.2dBat6GHz •

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

BFP640

NPN Silicon Germanium RF Transistor

NPNSiliconGermaniumRFTransistor •HighgainlownoiseRFtransistor •Providesoutstandingperformance forawiderangeofwirelessapplications •IdealforCDMAandWLANapplications •OutstandingnoisefigureF=0.65dBat1.8GHz OutstandingnoisefigureF=1.2dBat6GHz •

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

BFP640E6327

NPN Silicon Germanium RF Transistor

NPNSiliconGermaniumRFTransistor •HighgainlownoiseRFtransistor •Providesoutstandingperformance forawiderangeofwirelessapplications •IdealforCDMAandWLANapplications •OutstandingnoisefigureF=0.65dBat1.8GHz OutstandingnoisefigureF=1.2dBat6GHz •

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

BFP640F

NPN Silicon Germanium RF Transistor

ProductBrief TheBFP640FislinearverylownoisewidebandNPNbipolarRFtransistor.ThedeviceisbasedonInfineon’sreliablehighvolumesilicongermaniumcarbon(SiGe:C)heterojunctionbipolartechnology.ThecollectordesignsupportsvoltagesuptoVCE=4.1VandcurrentsuptoIC=50mA

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

BFP640FESD

Robust Low Noise Silicon Germanium Bipolar RF Transistor

ProductBrief TheBFP640FESDisaverylownoisewidebandNPNbipolarRFtransistor.ThedeviceisbasedonInfineon’sreliablehighvolumesilicongermaniumcarbon(SiGe:C)heterojunctionbipolartechnology.ThecollectordesignsupportsvoltagesuptoVCEO=4.1VandcurrentsuptoIC=50mA.

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

BFP640H6327

NPN Silicon Germanium RF Transistor

NPNSiliconGermaniumRFTransistor •HighgainlownoiseRFtransistor •Providesoutstandingperformance forawiderangeofwirelessapplications •IdealforCDMAandWLANapplications •OutstandingnoisefigureF=0.65dBat1.8GHz OutstandingnoisefigureF=1.2dBat6GHz •

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

BFP650

NPN Silicon Germanium RF Transistor

ProductBrief TheBFP650isahighlinearitywidebandNPNbipolarRFtransistor.ThedeviceisbasedonInfineon’sreliablehighvolumesilicongermaniumcarbon(SiGe:C)heterojunctionbipolartechnology.ThecollectordesignsupportsvoltagesuptoVCEO=4VandcurrentsuptoIC=150mA.With

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

BFP650

NPN Silicon Germanium RF Transistor

NPNSiliconGermaniumRFTransistor Preliminarydata •Forhighpoweramplifiers •Idealforlowphasenoiseoscilators •Maxim.availableGainGma=21dBat1.8GHz NoisefigureF=0.9dBat1.8GHz •Goldmetallizationforhighreliability •70GHzfT-SiliconGermaniumtechnology.

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

详细参数

  • 型号:

    BFP

  • 制造商:

    INFINEON

  • 制造商全称:

    Infineon Technologies AG

  • 功能描述:

    NPN Silicon RF Transistor

供应商型号品牌批号封装库存备注价格
INFINEON
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
INFINEON/英飞凌
23+
SOT-343
50000
全新原装正品现货,支持订货
询价
Infineon/英飞凌
24+
20000
全新、原装、现货
询价
INFINEON/英飞凌
24+
NA/
9250
原装现货,当天可交货,原型号开票
询价
INFINEON/英飞凌
22+
SOT-343
20000
原装现货,实单支持
询价
ADI
23+
SOT-343
8000
只做原装现货
询价
ADI
23+
SOT-343
7000
询价
英飞凌
25+
SOT-343
6000
原装正品,假一罚十!
询价
VISHAY
24+
SOD323
6618
公司现货库存,支持实单
询价
INFINEON
23+
SOT-343
750000
询价
更多BFP供应商 更新时间2025-6-10 9:03:00