Product Brief

The BFP450 is a high linearity wideband NPN bipolar RF transistor. The collector design supports voltages up to VCEO = 4.5 V and currents up to IC = 170 mA. With its high linearity at currents as low as 50 mA the device supports energy efficient designs. The typical transition frequency is approximately 24 GHz, hence the device offers high power gain at frequencies up to 3 GHz in amplifier applications. The device is housed in an easy to use plastic package with visible leads.

Features

• Highly linear low noise driver amplifier for all RF frontends up to 3 GHz

• Based on Infineon´s reliable high volume 25 GHz silicon bipolar technology

• Output compression point OP1dB = 19 dBm at 90 mA, 3 V, 1.9 GHz, 50 Ω system

• Output 3rd order intermodulation point OIP3 = 31 dBm at 90 mA, 3 V, 1.9 GHz, 50 Ω system

• Maximum available gain Gma = 15.5 dB at 50 mA, 3 V, 1.9 GHz

• Minimum noise figure NFmin = 1.7 dB at 50 mA, 3 V, 1.9 GHz

• Easy to use Pb-free (RoHS compliant) standard package with visible leads

• Qualification report according to AEC-Q101 available

Applications Examples

Driver amplifier

• ISM bands 434 and 868 MHz

• 1.9 GHz cordless phones

• CATV LNA

Transmitter driver amplifier

• 2.4 GHz WLAN and Bluetooth

Output stage LNA for active antennas

• TV, GPS, SDARS, 2.4 GHz WLAN, etc

Suitable for 3 - 5.5 GHz oscillators

BFP450H6327属于分立半导体产品 > 晶体管 - 双极（BJT）- 射频。英飞凌科技公司制造生产的BFP450H6327晶体管 - 双极（BJT）- 射频双极型射频晶体管是一种具有三个端子的半导体器件，用于在涉及射频的设备中开关或放大信号。双极结型晶体管设计为 NPN 或 PNP，特征参数包括晶体管类型、集射极击穿电压、跃迁频率、噪声系数、增益、功率、DC 电流增益和集电极电流。