丝印：APs；Package：SOT-343；NPN Silicon RF Transistor

Low Noise Silicon Bipolar RF Transistor • Low noise amplifier designed for low voltage applications, ideal for 1.2 V or 1.8 V supply voltage • Common e.g. in cordless phones, satellite receivers and oscillators up to 22 GHz • High gain and low noise at high frequencies due to high transit frequ

文件：92.84 Kbytes 页数：8 Pages

INFINEON

英飞凌

TRANZYSTORY NPN

[UNITRA CEMI] TRANZYSTORY NPN

文件：341.53 Kbytes 页数：4 Pages

ETCList of Unclassifed Manufacturers

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NPN Silicon RF Transistor (For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V)

NPN Silicon RF Transistor Preliminary data • For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V Outstanding Ga = 20 dB Noise Figure F = 0.95 dB • For oscillators up to 15 GHz • Transition frequency fT = 45 GHz • Gold metalization for high reliability • SIEGET ® 45 - Line

文件：48.56 Kbytes 页数：8 Pages

SIEMENS

西门子

丝印：APs；Package：SOT-343；NPN Silicon RF Transistor

文件：110.63 Kbytes 页数：10 Pages

INFINEON

英飞凌

丝印：APs；Package：SOT-343；Low Noise Silicon Bipolar RF Transistor

文件：576.27 Kbytes 页数：9 Pages

INFINEON

英飞凌

低噪声RF 管基

NPN硅射频晶体管 • 低噪声放大器专为低电压应用而设计，适用于 1.2 V 或 1.8 V 电源电压。支持 2.9 V Vcc，具有足够的外部集电极电阻。\n• 可用于无绳电话和卫星接收器等\n• 无铅（符合 RoHS 标准）标准封装，带可见引线;

Infineon

英飞凌

NPN Silicon RF Transistor

Product description The BFP520F is a low noise device based on a grounded emitter (SIEGET™) that is part of Infineon’s established fifth generation RF bipolar transistor family. Its transition frequency fT of 45 GHz, high gain and low noise make the device suitable for applications up to 15 GHz.

文件：53.16 Kbytes 页数：3 Pages

INFINEON

英飞凌

NPN Silicon RF Transistor

文件：110.63 Kbytes 页数：10 Pages

INFINEON

英飞凌

Low Noise Silicon Bipolar RF Transistor

文件：576.27 Kbytes 页数：9 Pages

INFINEON

英飞凌

Low Noise Silicon Bipolar RF Transistor

文件：537.41 Kbytes 页数：6 Pages

INFINEON

英飞凌