NPN Silicon Germanium RF Transistor

NPN Silicon Germanium RF Transistor* • High gain low noise RF transistor • Small package 1.4 x 0.8 x 0.59 mm • Outstanding noise figure F = 0.7 dB at 1.8 GHz Outstanding noise figure F = 1.3 dB at 6 GHz • Maximum stable gain Gms = 21 dB at 1.8 GHz Gma = 10 dB at 6 GHz • Gold metal

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NPN Silicon Germanium RF Transistor

NPN Silicon Germanium RF Transistor • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz Outstanding noise figure F = 1.2 dB at 6 GHz •

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NPN Silicon Germanium RF Transistor

NPN Silicon Germanium RF Transistor • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz Outstanding noise figure F = 1.2 dB at 6 GHz •

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NPN Silicon Germanium RF Transistor

NPN Silicon Germanium RF Transistor • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz Outstanding noise figure F = 1.2 dB at 6 GHz •

文件：154.94 Kbytes 页数：10 Pages

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NPN Silicon Germanium RF Transistor

NPN Silicon Germanium RF Transistor • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz Outstanding noise figure F = 1.2 dB at 6 GHz •

文件：154.94 Kbytes 页数：10 Pages

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NPN Silicon Germanium RF Transistor

Product Brief The BFP640F is linear very low noise wideband NPN bipolar RF transistor. The device is based on Infineon’s reliable high volume silicon germanium carbon (SiGe:C) heterojunction bipolar technology. The collector design supports voltages up to VCE = 4.1 V and currents up to IC = 50 mA

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Robust Low Noise Silicon Germanium Bipolar RF Transistor

Product Brief The BFP640FESD is a very low noise wideband NPN bipolar RF transistor. The device is based on Infineon’s reliable high volume silicon germanium carbon (SiGe:C) heterojunction bipolar technology. The collector design supports voltages up to VCEO = 4.1 V and currents up to IC = 50 mA.

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NPN Silicon Germanium RF Transistor

NPN Silicon Germanium RF Transistor • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz Outstanding noise figure F = 1.2 dB at 6 GHz •

文件：154.94 Kbytes 页数：10 Pages

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NPN Silicon Germanium RF Transistor

NPN Silicon Germanium RF Transistor Preliminary data • For high power amplifiers • Ideal for low phase noise oscilators • Maxim. available Gain Gma = 21 dB at 1.8 GHz Noise figure F = 0.9 dB at 1.8 GHz • Gold metallization for high reliability • 70 GHz fT- Silicon Germanium technology.

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NPN Silicon Germanium RF Transistor

Product Brief The BFP650 is a high linearity wideband NPN bipolar RF transistor. The device is based on Infineon’s reliable high volume silicon germanium carbon (SiGe:C) heterojunction bipolar technology. The collector design supports voltages up to VCEO = 4 V and currents up to IC = 150 mA. With

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