BFP640E6327分立半导体产品的晶体管-双极（BJT）-射频规格书PDF中文资料

BFP640E6327属于分立半导体产品的晶体管-双极（BJT）-射频。由英飞凌科技股份公司制造生产的BFP640E6327晶体管 - 双极（BJT）- 射频双极型射频晶体管是一种具有三个端子的半导体器件，用于在涉及射频的设备中开关或放大信号。双极结型晶体管设计为 NPN 或 PNP，特征参数包括晶体管类型、集射极击穿电压、跃迁频率、噪声系数、增益、功率、DC 电流增益和集电极电流。

NPN Silicon Germanium RF Transistor

• High gain low noise RF transistor

• Provides outstanding performance

for a wide range of wireless applications

• Ideal for CDMA and WLAN applications

• Outstanding noise figure F = 0.65 dB at 1.8 GHz

Outstanding noise figure F = 1.2 dB at 6 GHz

• High maximum stable gain

Gms = 24 dB at 1.8 GHz

• Gold metallization for extra high reliability

• 70 GHz fT-Silicon Germanium technology

• Pb-free (RoHS compliant) package1)

• Qualified according AEC Q101