BFP620分立半导体产品的晶体管-双极（BJT）-射频规格书PDF中文资料

BFP620属于分立半导体产品的晶体管-双极（BJT）-射频。由英飞凌科技股份公司制造生产的BFP620晶体管 - 双极（BJT）- 射频双极型射频晶体管是一种具有三个端子的半导体器件，用于在涉及射频的设备中开关或放大信号。双极结型晶体管设计为 NPN 或 PNP，特征参数包括晶体管类型、集射极击穿电压、跃迁频率、噪声系数、增益、功率、DC 电流增益和集电极电流。

Low Noise SiGe:C Bipolar RF Transistor

• Highly linear low noise RF transistor

• Provides outstanding performance

for a wide range of wireless applications

• Based on Infineons reliable high volume

Silicon Germanium technology

• Ideal for CDMA and WLAN applications

• Collector design provides high linearity of

14.5 dBm OP1dB for low voltage application

• Maximum stable gain

Gms = 21.5 dB at 1.8 GHz

Gma = 11 dB at 6 GHz

• Outstanding noise figure NFmin = 0.7 dB at 1.8 GHz

Outstanding noise figure NFmin = 1.3 dB at 6 GHz

• Accurate SPICE GP model enables effective

design in process

• Pb-free (RoHS compliant) and halogen-free package

with visible leads

• Qualification report according to AEC-Q101 available