丝印：ACs；Package：SOT-343；NPN Silicon Germanium RF Transistor

Low Noise SiGe:C Bipolar RF Transistor • Highly linear low noise RF transistor • Provides outstanding performance for a wide range of wireless applications • Based on Infineons reliable high volume Silicon Germanium technology • Ideal for CDMA and WLAN applications • Collector design

文件：209.97 Kbytes 页数：7 Pages

Infineon

英飞凌

丝印：ACs；Package：SOT-343；NPN Silicon Germanium RF Transistor

文件：641.59 Kbytes 页数：11 Pages

Infineon

英飞凌

丝印：ACs；Package：SOT-343；Low Noise SiGe:C Bipolar RF Transistor

文件：665.57 Kbytes 页数：10 Pages

Infineon

英飞凌

NPN Transistor

文件：350.51 Kbytes 页数：4 Pages

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低噪声RF 管基

• 高线性低噪声射频晶体管\n• 为各种无线应用提供出色的性能\n• 基于英飞凌可靠的高容量 SiGe:C 技术\n• 非常适合 CDMA 和 WLAN 应用\n• 集电极设计为低压应用提供了 14.5 dBm OP1dB 的高线性度\n• 最大稳定增益：1.8 GHz 时 Gms = 21.5 dB，6 GHz 时 Gma = 11 dB\n• 出色的噪声系数 NFmin = 0.7 dB（1.8 GHz）\n• 出色的噪声系数 NFmin = 1.3 dB（6 GHz）\n• 精确的 SPICE GP 模型可实现高效的设计流程\n• 无铅（符合 RoHS 标准）封装;

Infineon

英飞凌

NPN Silicon Germanium RF Transistor

NPN Silicon Germanium RF Transistor • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.7 dB at 1.8 GHz Outstanding noise figure F = 1.3 dB at 6 GHz • M

文件：196.23 Kbytes 页数：7 Pages

Infineon

英飞凌

NPN Silicon Germanium RF Transistor

NPN Silicon Germanium RF Transistor* • High gain low noise RF transistor • Small package 1.4 x 0.8 x 0.59 mm • Outstanding noise figure F = 0.7 dB at 1.8 GHz Outstanding noise figure F = 1.3 dB at 6 GHz • Maximum stable gain Gms = 21 dB at 1.8 GHz Gma = 10 dB at 6 GHz • Gold metal

文件：158.62 Kbytes 页数：6 Pages

Infineon

英飞凌

NPN Silicon Germanium RF Transistor

NPN Silicon Germanium RF Transistor* • High gain low noise RF transistor • Small package 1.4 x 0.8 x 0.59 mm • Outstanding noise figure F = 0.7 dB at 1.8 GHz Outstanding noise figure F = 1.3 dB at 6 GHz • Maximum stable gain Gms = 21 dB at 1.8 GHz Gma = 10 dB at 6 GHz • Gold metal

文件：154.82 Kbytes 页数：10 Pages

Infineon

英飞凌

NPN Silicon Germanium RF Transistor

NPN Silicon Germanium RF Transistor Preliminary data • High gain low noise RF transistor • Small package 1.4 x 0.8 x 0.59 mm • Outstanding noise figure F = 0.7 dB at 1.8 GHz Outstanding noise figure F = 1.3 dB at 6 GHz • Maximum stable gain Gms = 21 dB at 1.8 GHz Gma = 10 dB at 6

文件：195.96 Kbytes 页数：6 Pages

Infineon

英飞凌

NPN Silicon Germanium RF Transistor

NPN Silicon Germanium RF Transistor* • High gain low noise RF transistor • Small package 1.4 x 0.8 x 0.59 mm • Outstanding noise figure F = 0.7 dB at 1.8 GHz Outstanding noise figure F = 1.3 dB at 6 GHz • Maximum stable gain Gms = 21 dB at 1.8 GHz Gma = 10 dB at 6 GHz • Gold metal

文件：154.82 Kbytes 页数：10 Pages

Infineon

英飞凌