BFP620数据手册分立半导体产品的晶体管-双极（BJT）-射频规格书PDF

特性 Features

·Highly linear low noise RF transistor
· Provides outstanding performance for a wide range of wireless applications
·Based on Infineon's reliable high volume SiGe:C technology
·Ideal for CDMA and WLAN applications
·Collector design provides high linearity of 14.5 dBm OP1dB for low voltage application
·Maximum stable gain :Gms = 21.5 dB at 1.8 GHz ,Gma = 11 dB at 6 GHz
·Outstanding noise figure NFmin = 0.7 dB at 1.8 GHz
·Outstanding noise figure NFmin = 1.3 dB at 6 GHz
·Accurate SPICE GP model enables effective design in process
·Pb-free (RoHS compliant) package
· Qualified according AEC Q101

简介

BFP620属于分立半导体产品的晶体管-双极（BJT）-射频。由制造生产的BFP620晶体管 - 双极（BJT）- 射频双极型射频晶体管是一种具有三个端子的半导体器件，用于在涉及射频的设备中开关或放大信号。双极结型晶体管设计为 NPN 或 PNP，特征参数包括晶体管类型、集射极击穿电压、跃迁频率、噪声系数、增益、功率、DC 电流增益和集电极电流。