BFP540ESD数据手册分立半导体产品的晶体管-双极（BJT）-射频规格书PDF

描述 Description

NPN Silicon RF Transistor for ESD protected high gain low noise amplifier

特性 Features

·Excellent ESD performance typical value 1000 V (HBM)
·Outstanding Gms = 21.5 dB
·Noise Figure F = 0.9 dB
·Gold metallization for high reliability
·SIEGET® 45 - Line
·Pb-free (RoHS compliant) package
·Qualification report according to AEC-Q101 available

应用 Application

·Wireless Communications
·For amplifier and oscillator applications in RF Front-end

简介

BFP540ESD属于分立半导体产品的晶体管-双极（BJT）-射频。由制造生产的BFP540ESD晶体管 - 双极（BJT）- 射频双极型射频晶体管是一种具有三个端子的半导体器件，用于在涉及射频的设备中开关或放大信号。双极结型晶体管设计为 NPN 或 PNP，特征参数包括晶体管类型、集射极击穿电压、跃迁频率、噪声系数、增益、功率、DC 电流增益和集电极电流。