BFP640H6327中文资料英飞凌数据手册PDF规格书

NPN Silicon Germanium RF Transistor

• High gain low noise RF transistor

• Provides outstanding performance

for a wide range of wireless applications

• Ideal for CDMA and WLAN applications

• Outstanding noise figure F = 0.65 dB at 1.8 GHz

Outstanding noise figure F = 1.2 dB at 6 GHz

• High maximum stable gain

Gms = 24 dB at 1.8 GHz

• Gold metallization for extra high reliability

• 70 GHz fT-Silicon Germanium technology

• Pb-free (RoHS compliant) package1)

• Qualified according AEC Q101