BFP640F分立半导体产品的晶体管-双极（BJT）-射频规格书PDF中文资料

BFP640F属于分立半导体产品的晶体管-双极（BJT）-射频。由英飞凌科技股份公司制造生产的BFP640F晶体管 - 双极（BJT）- 射频双极型射频晶体管是一种具有三个端子的半导体器件，用于在涉及射频的设备中开关或放大信号。双极结型晶体管设计为 NPN 或 PNP，特征参数包括晶体管类型、集射极击穿电压、跃迁频率、噪声系数、增益、功率、DC 电流增益和集电极电流。

Product Brief

The BFP640F is linear very low noise wideband NPN bipolar RF transistor. The device is based on Infineon’s reliable high volume silicon germanium carbon (SiGe:C) heterojunction bipolar technology. The collector design supports voltages up to VCE = 4.1 V and currents up to IC = 50 mA. With its high linearity at currents as low as 10 mA (see Fig. 5-8) the device supports energy efficient designs. The typical transition frequency is approximately 40 GHz, hence the device offers high power gain at frequencies up to 8 GHz in amplifier applications. The device is housed in a thin small flat plastic package with visible leads.

特性 Features

• Linear low noise amplifier based on Infineon´s reliable,

high volume SiGe:C technology

• High linearity OIP3 = 27.5 dBm @ 5.5 GHz, 3 V, 25 mA

• High transition frequency fT = 42 GHz @ 3 V, 30 mA

• NFmin = 0.75 dB @ 3.5 GHz, 3 V, 6 mA

• Maximum power gain Gma = 16.5 dB @ 3.5 GHz, 3 V, 25 mA

• Low power consumption, ideal for mobile applications

• Very common as GPS low noise amplifier, see respective

application notes on Infineon internet page

• Easy to use Pb-free (RoHS compliant) and halogen-free

standard package with visible leads

• Qualification report according to AEC-Q101 available

Applications

As Low Noise Amplifier (LNA) in

• Satellite communication systems: Navigation systems (GPS, Glonass), satellite radio (SDARs, DAB) and C-band LNB

• Mobile, portable and fixed connectivity applications: WLAN 802.11a/b/g/n/ac, WiMAX 2.5/3.5/5.5 GHz, UWB, Bluetooth

• Multimedia applications such as mobile/portable TV, CATV, FM Radio

• 3G/4G UMTS/LTE mobile phone applications

• ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications

As discrete active mixer, amplifier in VCOs and buffer amplifier