BFP640F

NPN Silicon Germanium RF Transistor

ProductBrief TheBFP640FislinearverylownoisewidebandNPNbipolarRFtransistor.ThedeviceisbasedonInfineon’sreliablehighvolumesilicongermaniumcarbon(SiGe:C)heterojunctionbipolartechnology.ThecollectordesignsupportsvoltagesuptoVCE=4.1VandcurrentsuptoIC=50mA

BFP640F

超低噪声SiGe:C晶体管，可用于高达12 GHz的频率; ·High gain low noise RF transistor\n · Provides outstanding performance for a wide range of wireless applications\n · Ideal for CDMA and WLAN applications\n · Outstanding noise figure F = 0.65 dB at 1.8 GHz ,Outstanding noise figure F = 1.2 dB at 6 GHz\n ·High maximum stable gain:Gms = 23 dB at 1.8 GHz\n ·Gold metallization for extra high reliability\n · 70 GHz fT-Silicon Germanium technology\n ·Pb-free (RoHS compliant) package1)\n ·Qualified according AEC Q101\n;

NPN Silicon Germanium RF Transistor

BFP640F

NPN Silicon Germanium RF Transistor

BFP640F

Low Noise Silicon Germanium Bipolar RF Transistor

BFP640FESD

Robust Low Noise Silicon Germanium Bipolar RF Transistor

ProductBrief TheBFP640FESDisaverylownoisewidebandNPNbipolarRFtransistor.ThedeviceisbasedonInfineon’sreliablehighvolumesilicongermaniumcarbon(SiGe:C)heterojunctionbipolartechnology.ThecollectordesignsupportsvoltagesuptoVCEO=4.1VandcurrentsuptoIC=50mA.

BFP640FESD

超低噪声SiGe:C晶体管，可用于高达12 GHz的频率; ·Robust high performance low noise amplifier based on Infineon´s reliable, high volume SiGe:C wafer technology\n ·2 kV ESD robustness (HBM) due to integrated protection circuits\n ·High maximum RF input power of 21 dBm\n ·0.6 dB minimum noise figure typical at 1.5 GHz, 0.65 dB at 2.4 GHz, 6 mA\n ·28.5 dB maximum gain Gms typical at 1.5 GHz, 25 dB at 2.4 GHz, 30 mA\n ·26 dBm OIP3 typical at 2.4 GHz, 30 mA\n ·Accurate SPICE GP model available to enable effective design in process (see chapter 6)\n ·Thin, small, flat, Pb- and halogen free (RoHS compliant) package with visible leads\n;

The BFP640FESD is a Silicon Germanium Carbon (SiGe:C) NPN Heterojunction wideband Bipolar RF Transistor (HBT) in a plastic thin small flat 4-pin dual emitter package with visible leads. The device is fitted with internal protection circuits, which enhance robustness against ESD and high RF input power strongly. The device combines robustness with very high RF gain and lowest noise figure at low operation current for use in a wide range of wireless applications. The BFP640FESD is especially well-suited for portable battery-powered applications in which reduced power consumption is a key requirement. Device design supports collector voltages up to 4.1 V.

BFP640F_07

NPN Silicon Germanium RF Transistor

BFP640F_15

Low Noise Silicon Germanium Bipolar RF Transistor

BFP640FE6327

Package：4-SMD，扁平引线；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极（BJT）- 射频 描述：RF TRANS NPN 4.5V 40GHZ 4TSFP

BFP640FESDH6327XTSA1

Package：4-SMD，扁平引线；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极（BJT）- 射频 描述：RF TRANS NPN 4.7V 46GHZ 4TSFP