NPN Silicon Germanium RF Transistor

NPN Silicon Germanium RF Transistor • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz Outstanding noise figure F = 1.2 dB at 6 GHz •

文件：272.86 Kbytes 页数：8 Pages

Infineon

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NPN Silicon Germanium RF Transistor

NPN Silicon Germanium RF Transistor • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz Outstanding noise figure F = 1.2 dB at 6 GHz •

文件：154.94 Kbytes 页数：10 Pages

Infineon

英飞凌

NPN Silicon Germanium RF Transistor

NPN Silicon Germanium RF Transistor • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz Outstanding noise figure F = 1.2 dB at 6 GHz •

文件：154.94 Kbytes 页数：10 Pages

Infineon

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Low Noise Silicon Germanium Bipolar RF Transistor

文件：1.36937 Mbytes 页数：28 Pages

Infineon

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NPN Silicon Germanium RF Transistor

文件：154.94 Kbytes 页数：10 Pages

Infineon

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低噪声RF 管基

• 高增益低噪声射频晶体管\n• 为各种无线应用提供出色的性能\n• 非常适合 CDMA 和 WLAN 应用\n•  1.8 GHz 时出色的噪声系数 F = 0.65 dB，6 GHz 时出色的噪声系数 F = 1.2 dB\n• 高最大稳定增益：1.8 GHz 时 Gms = 24 dB\n• 镀金处理，可靠性更高\n• 70 GHz fT-硅锗技术\n• 无铅（符合 RoHS 标准）封装;

Infineon

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NPN Silicon Germanium RF Transistor

NPN Silicon Germanium RF Transistor • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz Outstanding noise figure F = 1.2 dB at 6 GHz •

文件：154.94 Kbytes 页数：10 Pages

Infineon

英飞凌

NPN Silicon Germanium RF Transistor

Product Brief The BFP640F is linear very low noise wideband NPN bipolar RF transistor. The device is based on Infineon’s reliable high volume silicon germanium carbon (SiGe:C) heterojunction bipolar technology. The collector design supports voltages up to VCE = 4.1 V and currents up to IC = 50 mA

文件：190.83 Kbytes 页数：6 Pages

Infineon

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Robust Low Noise Silicon Germanium Bipolar RF Transistor

Product Brief The BFP640FESD is a very low noise wideband NPN bipolar RF transistor. The device is based on Infineon’s reliable high volume silicon germanium carbon (SiGe:C) heterojunction bipolar technology. The collector design supports voltages up to VCEO = 4.1 V and currents up to IC = 50 mA.

文件：1.64277 Mbytes 页数：28 Pages

Infineon

英飞凌

NPN Silicon Germanium RF Transistor

NPN Silicon Germanium RF Transistor • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz Outstanding noise figure F = 1.2 dB at 6 GHz •

文件：154.94 Kbytes 页数：10 Pages

Infineon

英飞凌