NPN Silicon RF Transistor

Product description The BFP460 is a low noise device based on a grounded emitter (SIEGET™) that is part of Infineon’s established fourth generation RF bipolar transistor family. Its transition frequency fT of 22 GHz, low current and high robustness characteristics make the device suitable for amp

文件：134.43 Kbytes 页数：5 Pages

INFINEON

英飞凌

NPN Silicon RF Transistor

NPN Silicon RF Transistor • General purpose low noise amplifier for low voltage, low current applications • High ESD robustness, typical 1500V (HBM) • Low minimum noise figure 1.1 dB at 1.8 GHz • High linearity: output compression point OP1dB = 13 dBm @ 3V, 35mA, 1.8GHz • Easy to use standard

文件：623.24 Kbytes 页数：11 Pages

INFINEON

英飞凌

NPN Silicon RF Transistor

文件：623.24 Kbytes 页数：11 Pages

INFINEON

英飞凌

低噪声RF 管基

NPN硅射频晶体管 • 适用于低电压、低电流应用的通用低噪声放大器\n• 1.8 GHz 时最小噪声系数低至 1.1 dB\n• 易于使用的标准封装，带有可见引线\n• 无铅（符合 RoHS 标准）封装;

Infineon

英飞凌

NPN Silicon RF Transistor

NPN Silicon RF Transistor • General purpose low noise amplifier for low voltage, low current applications • High ESD robustness, typical 1500V (HBM) • Low minimum noise figure 1.1 dB at 1.8 GHz • High linearity: output compression point OP1dB = 13 dBm @ 3V, 35mA, 1.8GHz • Easy to use standard

文件：623.24 Kbytes 页数：11 Pages

INFINEON

英飞凌

NPN Silicon RF Transistor

文件：623.24 Kbytes 页数：11 Pages

INFINEON

英飞凌

Low Noise Silicon Bipolar RF Transistor

文件：656.18 Kbytes 页数：10 Pages

INFINEON

英飞凌

包装：盒 类别：开发板，套件，编程器 射频评估和开发套件，开发板 描述：BOARD APPLICATION W/BFP460 LNA

INFINEON

英飞凌