NPN Silicon RF Transistor

NPN Silicon RF Transistor ● For power amplifier in DECT and PCN systems ● fT = 5.5GHz ● Gold metalization for high reliability

文件：79.18 Kbytes 页数：7 Pages

INFINEON

英飞凌

NPN Silicon RF Transistor (For power amplifier in DECT and PCN systems)

NPN Silicon RF Transistor • For power amplifier in DECT and PCN systems • fT = 5.5GHz • Gold metalization for high reliability

文件：60.58 Kbytes 页数：7 Pages

SIEMENS

西门子

NPN Silicon RF Transistor (For power amplifier in DECT and PCN systems)

NPN Silicon RF Transistor • For power amplifier in DECT and PCN systems • fT = 5.5GHz • Gold metalization for high reliability

文件：60.58 Kbytes 页数：7 Pages

SIEMENS

西门子

NPN Silicon RF Transistor

NPN Silicon RF Transistor ● For power amplifier in DECT and PCN systems ● fT = 5.5GHz ● Gold metalization for high reliability

文件：79.18 Kbytes 页数：7 Pages

INFINEON

英飞凌

NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 to 2.5mA)

NPN Silicon RF Transistor • For low-power amplifiers in mobile communication systems (pager) at collector currents from 0.2 to 2.5mA fT = 7GHz • F = 2.1dB at 900MHz

文件：76.1 Kbytes 页数：8 Pages

SIEMENS

西门子

NPN Silicon RF Transistor

NPN Silicon RF Transistor ● For low-power amplifier in mobile communication systems (pager) at collector currents from 0.2 mA to 2.5 mA fT = 7 GHz ● F = 2.1 dB at 900 MHz

文件：117.46 Kbytes 页数：7 Pages

INFINEON

英飞凌

NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 to 2.5mA)

NPN Silicon RF Transistor • For low-power amplifiers in mobile communication systems (pager) at collector currents from 0.2 to 2.5mA fT = 7GHz • F = 2.1dB at 900MHz

文件：59.03 Kbytes 页数：7 Pages

SIEMENS

西门子

NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA)

NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA • fT = 8GHz F = 1.45dB at 900MHz

文件：60.99 Kbytes 页数：7 Pages

SIEMENS

西门子

NPN Silicon RF Transistor

Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA • fT = 8 GHz, NFmin = 0.9 dB at 900 MHz • Pb-free (RoHS compliant) package • Qualification report according to AEC-Q101 available

文件：79.29 Kbytes 页数：7 Pages

INFINEON

英飞凌

NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA)

NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA • fT = 8GHz F = 1.45dB at 900MHz

文件：58.88 Kbytes 页数：7 Pages

SIEMENS

西门子