NPN Silicon RF Transistor

NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA • fT = 8 GHz F = 1.45 dB at 900 MHz

文件：88.12 Kbytes 页数：7 Pages

INFINEON

英飞凌

NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA)

NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA • fT = 8GHz F = 1.45dB at 900MHz

文件：58.88 Kbytes 页数：7 Pages

SIEMENS

西门子

POWER TRANSISTORS(3.0A,40-80V,12.5W)

COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS

文件：228.62 Kbytes 页数：4 Pages

MOSPEC

统懋

3 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60-80 VOLTS 12.5 WATTS

3 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60–80 VOLTS 12.5 WATTS . . . designed for low power audio amplifier and low current, high speed switching applications. • Collector–Emitter Sustaining Voltage — VCEO(sus) = 60 Vdc — MJE171, MJE181 VCEO(sus) = 80 Vdc — MJE172, MJE182

文件：172.52 Kbytes 页数：4 Pages

MOTOROLA

摩托罗拉

POWER TRANSISTORS COMPLEMENTARY SILICON

Complementary Plastic Silicon Power Transistors The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. Features • Collector−Emitter Sustaining Voltage − VCEO(sus) = 40 Vdc − MJE170, MJE180 = 60 Vdc − MJE171,

文件：172.52 Kbytes 页数：4 Pages

ONSEMI

安森美半导体