NPN Silicon RF Transistor

NPN Silicon RF Transistor* • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers • fT = 8 GHz, F = 1 dB at 900 MHz • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 * Short term description

文件：75.36 Kbytes 页数：7 Pages

INFINEON

英飞凌

Low Noise Silicon Bipolar RF Transistor

Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers • fT = 8 GHz, NFmin = 1 dB at 900 MHz • Pb-free (RoHS compliant) package • Qualification report according to AEC-Q101 available

文件：537.35 Kbytes 页数：6 Pages

INFINEON

英飞凌

NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers)

NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 8GHz F = 1.3dB at 900MHz

文件：59.92 Kbytes 页数：7 Pages

SIEMENS

西门子

NPN Silicon RF Transistor

文件：82.86 Kbytes 页数：7 Pages

INFINEON

英飞凌

Low Noise Silicon Bipolar RF Transistor

Low Noise Silicon Bipolar RF Transistor • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers • fT = 8 GHz, NFmin = 1 dB at 900 MHz • Pb-free (RoHS compliant) package • Qualification report according to AEC-Q101 available

文件：537.35 Kbytes 页数：6 Pages

INFINEON

英飞凌

NPN Silicon RF Transistor

文件：82.86 Kbytes 页数：7 Pages

INFINEON

英飞凌

高线性度RF 管基

NPN硅射频晶体管 • 适用于低噪声、高增益放大器，频率高达 2 GHz\n• fT = 8 GHz，NFmin = 1 dB（频率 900 MHz）\n• 无铅（符合 RoHS 标准）封装;

Infineon

英飞凌