BFP650F

NPN Silicon Germanium RF Transistor

LinearLowNoiseSiGe:CBipolarRFTransistor •Formediumpoweramplifiersanddriverstages •BasedonInfineonsreliablehighvolumeSilicon Germaniumtechnology •HighOIP3andP-1dB •Idealforlowphasenoiseoscilators •Maxim.availableGainG ma=21.5dBat1.8GHz Mini

BFP650F

高线性硅和SiGe:C（硅锗：碳）晶体管，可用于高达6 GHz的频率

NPN Silicon Germanium RF Transistor; ·For medium power amplifiers and driver stages\n ·High OIP3 and P-1dB\n ·Ideal for low phase noise oscilators\n ·Maxim. available Gain Gma = 21.5 dB at 1.8 GHz\n ·Noise figure F = 0.8 dB at 1.8 GHz\n ·70 GHz fT- Silicon Germanium technology\n ·Pb-free (RoHS compliant) package\n ·Qualification;

BFP650F

Linear Low Noise SiGe:C Bipolar RF Transistor

BFP650F_13

Linear Low Noise SiGe:C Bipolar RF Transistor

BFP650FH6327XTSA1

Package：4-SMD，扁平引线；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极（BJT）- 射频 描述：RF TRANS NPN 4.5V 42GHZ 4TSFP