BFP650F数据手册分立半导体产品的晶体管-双极（BJT）-射频规格书PDF

描述 Description

NPN Silicon Germanium RF Transistor

特性 Features

·For medium power amplifiers and driver stages
·High OIP3 and P-1dB
·Ideal for low phase noise oscilators
·Maxim. available Gain Gma = 21.5 dB at 1.8 GHz
·Noise figure F = 0.8 dB at 1.8 GHz
·70 GHz fT- Silicon Germanium technology
·Pb-free (RoHS compliant) package
·Qualification report according to AEC-Q101 available

应用 Application

·Driver amplifier
·ISM bands 434 and 868 MHz
·1.9 GHz cordless phones
·CATV LNA
·Transmitter driver amplifier
·2.4 GHz WLAN / Bluetooth, 2.4 / 3.5 GHz WiMAX
·Output stage LNA for active antennas
·TV, GPS, SDARS
·2.4 / 5 GHz WLAN
·2.4 / 3.5 / 5 GHz WiMAX, etc.
·Suitable for 5 - 10.5 GHz oscillators

简介

BFP650F属于分立半导体产品的晶体管-双极（BJT）-射频。由制造生产的BFP650F晶体管 - 双极（BJT）- 射频双极型射频晶体管是一种具有三个端子的半导体器件，用于在涉及射频的设备中开关或放大信号。双极结型晶体管设计为 NPN 或 PNP，特征参数包括晶体管类型、集射极击穿电压、跃迁频率、噪声系数、增益、功率、DC 电流增益和集电极电流。