BFP420F数据手册分立半导体产品的晶体管-双极（BJT）-射频规格书PDF

描述 Description

Low Noise Silicon Bipolar RF Transistor

特性 Features

·Low noise high gain silicon bipolar RF transistor
·Based on Infineon´s reliable very high volume 25 GHz silicon bipolar technology
·0.9 dB minimum noise figure typical at 900 MHz, 3 V, 4 mA
·16 dB maximum gain (Gma) typical at 2.4 GHz, 3 V, 15 mA
·28 dBm OIP3 typical at 2.4 GHz, 4 V, 40 mA
·16.5 dBm OP1dB typical at 2.4 GHz, 4 V, 40 mA
·Popular in discrete oscillators
·Thin, small, flat, Pb-free (RoHS compliant) and Hal-free
·(“green”) package with visible leads

应用 Application

·As Low Noise Amplifier (LNA) in
·Satellite communication systems: Navigation systems (GPS, Glonass), satellite radio (SDARs, DAB)
·Multimedia applications such as mobile/portable TV, CATV, FM Radio
·ISM applications like RKE, AMR and Zigbee
·As discrete active mixer in RF Frontends
·As active device in discretes oscillators

简介

BFP420F属于分立半导体产品的晶体管-双极（BJT）-射频。由制造生产的BFP420F晶体管 - 双极（BJT）- 射频双极型射频晶体管是一种具有三个端子的半导体器件，用于在涉及射频的设备中开关或放大信号。双极结型晶体管设计为 NPN 或 PNP，特征参数包括晶体管类型、集射极击穿电压、跃迁频率、噪声系数、增益、功率、DC 电流增益和集电极电流。