BFP650数据手册分立半导体产品的晶体管-双极（BJT）-射频规格书PDF

描述 Description

High Linearity Low Noise SiGe:C NPN RF Transistor

特性 Features

·Highly linear low noise driver amplifier for all RF frontends up to 4.5 GHz
·Output compression point OP1dB = 17 dBm at 70 mA, 3V, 2.4 GHz, 50Ω system
·Output 3rd order intermodulation point OIP3 = 30 dBm at 70 mA, 3 V, 2.4 GHz, 50 Ω system
·Maximum available gain Gma = 17.5 dB at 70 mA, 3V, 2.4 GHz
·Minimum noise figure NFmin = 1 dB at 30 mA, 3V, 2.4 GHz
·Based on Infineon´s reliable, high volume SiGe:C wafer technology
·Easy to use Pb-free (RoHS compliant) standard package with visible leads
·Qualification report according to AEC-Q101 available

应用 Application

·Driver amplifier
·ISM bands 434 and 868 MHz
·1.9 GHz cordless phones
·CATV LNA
·Transmitter driver amplifier
·2.4 GHz WLAN / Bluetooth, 2.4 / 3.5 GHz WiMAX
·Output stage LNA for active antennas
·TV, GPS, SDARS
·2.4 / 5 GHz WLAN
·2.4 / 3.5 / 5 GHz WiMAX, etc.
·Suitable for 5 - 10.5 GHz oscillators

简介

BFP650属于分立半导体产品的晶体管-双极（BJT）-射频。由制造生产的BFP650晶体管 - 双极（BJT）- 射频双极型射频晶体管是一种具有三个端子的半导体器件，用于在涉及射频的设备中开关或放大信号。双极结型晶体管设计为 NPN 或 PNP，特征参数包括晶体管类型、集射极击穿电压、跃迁频率、噪声系数、增益、功率、DC 电流增益和集电极电流。