Robust High Performance Low Noise Bipolar RF Transistor

Product Brief The BFP720ESD is a Silicon Germanium Carbon (SiGe:C) NPN Heterojunction wideband Bipolar RF Transistor (HBT) in a plastic dual emitter standard package with visible leads. The device is fitted with internal protection circuits, which enhance robustness against ESD and high RF input

文件：1.88516 Mbytes 页数：29 Pages

Infineon

英飞凌

低噪声RF 管基

BFP720ESD 是具有集成 ESD 保护功能的硅锗碳 (SiGe:C) NPN 异质结宽带双极射频晶体管 (HBT)。 • 高端 RF 性能与稳健性的独特组合：21 dBm 最大 RF 输入功率，集成保护电路带来 2 kV ESD 稳健性 (HBM)\n• 高增益 Gms = 26 dB (2.4 GHz 时) 和 Gma = 19.5 dB (5.5 GHz 时)、3 V、15 mA\n• OIP3 = 22 dBm (5.5 GHz 时)、3 V 和 15 mA 低电流消耗;

Infineon

英飞凌

C Heterojunction Wideband RF Bipolar Transistor

Product Brief The BFP720F is a very low noise wideband NPN bipolar RF transistor. The device is based on Infineon’s reliable high volume silicon germanium carbon (SiGe:C) heterojunction bipolar technology. The collector design supports voltages up to VCEO = 4.0 V and currents up to IC = 25 mA. Th

文件：1.96386 Mbytes 页数：26 Pages

Infineon

英飞凌

Low Noise Silicon Germanium Bipolar RF Transistor

文件：1.56031 Mbytes 页数：25 Pages

Infineon

英飞凌

Robust High Performance Low Noise Bipolar RF Transistor

文件：1.94228 Mbytes 页数：29 Pages

Infineon

英飞凌