Robust High Performance Low Noise Bipolar RF Transistor

Product Brief The BFP720ESD is a Silicon Germanium Carbon (SiGe:C) NPN Heterojunction wideband Bipolar RF Transistor (HBT) in a plastic dual emitter standard package with visible leads. The device is fitted with internal protection circuits, which enhance robustness against ESD and high RF input

文件：1.88516 Mbytes 页数：29 Pages

INFINEON

英飞凌

低噪声RF 管基

BFP720ESD 是具有集成 ESD 保护功能的硅锗碳 (SiGe:C) NPN 异质结宽带双极射频晶体管 (HBT)。 • 高端 RF 性能与稳健性的独特组合：21 dBm 最大 RF 输入功率，集成保护电路带来 2 kV ESD 稳健性 (HBM)\n• 高增益 Gms = 26 dB (2.4 GHz 时) 和 Gma = 19.5 dB (5.5 GHz 时)、3 V、15 mA\n• OIP3 = 22 dBm (5.5 GHz 时)、3 V 和 15 mA 低电流消耗;

Infineon

英飞凌

SILICON POWER (SWITCHING) TRANSISTORS

FEATURES * 625mW POWER DISSIPATION * IC CONT 2.5A * IC Up To 10A Peak Pulse Current * Excellent hfe Characteristics Up To 10A (pulsed) * Extremely Low Saturation Voltage E.g. 10mV Typ. * Exhibits extremely low equivalent on-resistance; RCE(sat)

文件：355.42 Kbytes 页数：4 Pages

ZETEX

General Purpose Rectifier (600-1200 Amperes Average 4400 Volts)

文件：990.13 Kbytes 页数：4 Pages

POWEREX

Phase Control SCR (450-550 Amperes 2400 Volts)

Phase Control SCR 450-550 Amperes 2400 Volts Applications □ Power Supplies □ Battery Changers □ Motor Control □ VAR Generators

文件：720.59 Kbytes 页数：4 Pages

POWEREX