BFP720ESD数据手册Infineon中文资料规格书

描述 Description

The BFP720ESD is a Silicon Germanium Carbon (SiGe:C) NPN Heterojunction wideband Bipolar RF Transistor (HBT) in a plastic dual emitter standard package with visible leads. The device is fitted with internal protection circuits, which enhance robustness against ESD and high RF input power strongly. The device combines robustness with very high RF gain and lowest noise figure at low operation current for use in a wide range of wireless applications. The BFP720ESD is especially well-suited for portable battery-powered applications in which reduced power consumption is a key requirement. Device design supports collector voltages up to 4.2 V.

特性 Features

·Robust high performance low noise amplifier based on Infineon´s reliable, high volume SiGe:C wafer technology
·2 kV ESD robustness (HBM) due to integrated protection circuits
·High maximum RF input power of 21 dBm
·0.65 dB minimum noise figure typical at 2.4 GHz, 0.9 dB at 5.5 GHz, 5 mA
·26 dB maximum gain (Gma, Gms) typical at 2.4 GHz, 19.5 dB at 5.5 GHz, 15 mA
·22 dBm OIP3 typical at 5.5 GHz, 15 mA
·Accurate SPICE GP model available to enable effective design in process (see chapter 6)
·Easy to use, Pb- and halogen free (RoHS compliant) standard package with visible leads

应用 Application

As Low Noise Amplifier (LNA) in:·Mobile, portable and fixed connectivity applications: WLAN 802.11a/b/g/n, WiMax 2.5/3.5/5 GHz, UWB, Bluetooth
·Satellite communication systems: Navigation (GPS, Glonass), satellite radio (SDARs, DAB) and LNB
·3G/4G UMTS/LTE mobile phone applications
·Multimedia applications such as mobile/portable TV, CATV, FM Radio
·ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications. As discrete active mixer, amplifier in VCO's and buffer amplifier.