BFP720数据手册分立半导体产品的晶体管-双极（BJT）-射频规格书PDF

描述 Description

The BFP720 is a wideband Silicon Germanium Carbon (SiGe:C) NPN Heterojunction Bipolar Transistor (HBT) in a plastic 4-pin dual emitter SOT343 package. The device combines very high gain with lowest noise figure at low operating current for use in a wide range of wireless applications. The BFP720 is especially well-suited for portable battery-powered applications in which reduced power consumption is a key requirement. Collector design supports operation voltages from 1.0 V to 4.0 V.

特性 Features

·High performance general purpose wideband LNA transistor
·150 GHz fT-Silicon Germanium Carbon technology
·Enables Best-In-Class performance for wireless applications due to high dynamic range
·Transistor geometry optimized for low-current applications
·Operation voltage: 1.0 V to 4.0 V
·Very high gain at high frequencies and low current consumption
·26 dB maximum stable gain at 1.9 GHz and only 13 mA
·15 dB maximum available gain at 10 GHz and only 13 mA
·Ultra low noise figure from latest SiGe:C technology
·0.7 dB minimum noise figure at 5.5 GHz and 0.95 dB at 10 GHz
·High linearity OP1dB = +8.5 dBm and OIP3 = +23 dBm at 5.5 GHz and low current consumption of 13 mA
·Pb-free (RoHS compliant) package

应用 Application

·FM Radio
·Mobile TV
·RKE
·AMR
·Cellular
·ZigBee
·GPS
·WiMAX
·SDARs
·Bluetooth
·WiFi
·Cordless phone
·UMTS
·WLAN
·UWB
·LNB

简介

BFP720属于分立半导体产品的晶体管-双极（BJT）-射频。由制造生产的BFP720晶体管 - 双极（BJT）- 射频双极型射频晶体管是一种具有三个端子的半导体器件，用于在涉及射频的设备中开关或放大信号。双极结型晶体管设计为 NPN 或 PNP，特征参数包括晶体管类型、集射极击穿电压、跃迁频率、噪声系数、增益、功率、DC 电流增益和集电极电流。