丝印：ANs；Package：SOT-343；NPN Silicon RF Transistor

Product Brief The BFP450 is a high linearity wideband NPN bipolar RF transistor. The collector design supports voltages up to VCEO = 4.5 V and currents up to IC = 170 mA. With its high linearity at currents as low as 50 mA the device supports energy efficient designs. The typical transition frequ

文件：74.55 Kbytes 页数：7 Pages

Infineon

英飞凌

NPN Silicon RF Transistor (For medium power amplifiers)

NPN Silicon RF Transistor • For medium power amplifiers • Compression point P-1dB = +19 dBm at 1.8 GHz maximum available gain Gma = 14 dB at 1.8 GHz Noise figure F = 1.25 dB at 1.8 GHz • Transition frequency fT = 24 GHz • Gold metalization for high reliability • SIEGET ® 25 - Line

文件：49.87 Kbytes 页数：8 Pages

SIEMENS

西门子

丝印：ANs；Package：SOT-343；High Linearity Low Noise Si NPN RF Transistor

文件：1.82964 Mbytes 页数：27 Pages

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英飞凌

丝印：ANs；Package：SOT-343；Linear Low Noise Silicon Bipolar RF Transistor

文件：1.55085 Mbytes 页数：28 Pages

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高线性度RF 管基

高线性低噪声 Si NPN 射频晶体管 • 适用于所有高达 2.5 GHz 的射频前端的高线性低噪声驱动放大器\n• 输出三阶互调点 OIP3 = 31 dBm（90 mA、3 V、1.9 GHz、50 Ω 系统）\n• 最小噪声系数 NFmin = 1.7 dB（50 mA、3 V、1.9 GHz）\n• 易于使用的无铅（符合 RoHS 标准）标准封装，带有可见引线;

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英飞凌

High Linearity Silicon Bipolar RF Transistor

Product Brief The BFP450 is a high linearity wideband NPN bipolar RF transistor. The collector design supports voltages up to VCEO = 4.5 V and currents up to IC = 170 mA. With its high linearity at currents as low as 50 mA the device supports energy efficient designs. The typical transition frequ

文件：1.54971 Mbytes 页数：28 Pages

Infineon

英飞凌

High Linearity Low Noise Si NPN RF Transistor

文件：1.82964 Mbytes 页数：27 Pages

Infineon

英飞凌

Linear Low Noise Silicon Bipolar RF Transistor

文件：1.55085 Mbytes 页数：28 Pages

Infineon

英飞凌

Package：SC-82A，SOT-343；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极（BJT）- 射频 描述：RF TRANS NPN 5V 24GHZ SOT343-4

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英飞凌

Package：SC-82A，SOT-343；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极（BJT）- 射频 描述：RF TRANS NPN 5V 24GHZ SOT343-4

Infineon

英飞凌