isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 100A@ TC=25℃ ·Drain Source Voltage : VDSS= 30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 35mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

文件：330.77 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel 30-V (D-S) MOSFET

文件：994.12 Kbytes 页数：7 Pages

VBSEMI

微碧半导体

MOSFET N-CH 30V 13A TO251A

AOS

美国万代

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Gen III Power MOSFET • 100 Rg Tested • 100 UIS Tested APPLICATIONS • DC/DC Conversion - System Power

文件：960.85 Kbytes 页数：8 Pages

VBSEMI

微碧半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 53A@ TC=25℃ ·Drain Source Voltage : VDSS= 30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 70mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：353.26 Kbytes 页数：2 Pages

ISC

无锡固电

Limit Alarms (potentiometer adj.) A-UNIT

文件：126.99 Kbytes 页数：4 Pages

MSYSTEM

爱模