isc P-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= -55A@ TC=25℃ ·Drain Source Voltage : VDSS= -40V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 10mΩ(Max) @ VGS= -10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

文件：297.37 Kbytes 页数：2 Pages

ISC

无锡固电

P-Channel 40 V (D-S) MOSFET

文件：976.38 Kbytes 页数：7 Pages

VBSEMI

微碧半导体

200-4000 MHz MMIC Amplifier

文件：659.52 Kbytes 页数：11 Pages

ASB

200 ~ 4000 MHz MMIC Amplifier

文件：1.35831 Mbytes 页数：14 Pages

ASB

Illuminated Pushbutton - 22, 25, 28 & 30mm

文件：715.26 Kbytes 页数：16 Pages

CIT