30V N-Channel MOSFET

General Description The AOD418/AOI418 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK/IPAK package, this device is well suited for high current load applications. Product Summary V

文件：286.37 Kbytes 页数：6 Pages

AOSMD

万国半导体

丝印：IPAK；Package：TO-251；isc N-Channel MOSFET Transistor

文件：301.44 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel 30-V (D-S) MOSFET

文件：994.12 Kbytes 页数：7 Pages

VBSEMI

微碧半导体

MOSFET：N-Channel

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very effi

AOS

美国万代

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= -55A@ TC=25℃ ·Drain Source Voltage : VDSS= -40V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 10mΩ(Max) @ VGS= -10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

文件：297.98 Kbytes 页数：2 Pages

ISC

无锡固电

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= -55A@ TC=25℃ ·Drain Source Voltage : VDSS= -40V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 10mΩ(Max) @ VGS= -10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

文件：298.09 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel 40-V (D-S) MOSFET

文件：1.60867 Mbytes 页数：7 Pages

VBSEMI

微碧半导体

丝印：IPAK；Package：TO-251；isc N-Channel MOSFET Transistor

文件：302.09 Kbytes 页数：2 Pages

ISC

无锡固电

40V N-Channel MOSFET

文件：292.55 Kbytes 页数：6 Pages

AOSMD

万国半导体

P-Channel Enhancement Mode Field Effect Transistor

文件：275.54 Kbytes 页数：6 Pages

AOSMD

万国半导体