isc P-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= -55A@ TC=25℃ ·Drain Source Voltage : VDSS= -40V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 10mΩ(Max) @ VGS= -10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

文件：297.65 Kbytes 页数：2 Pages

ISC

无锡固电

P-Channel 40 V (D-S) MOSFET

文件：976.58 Kbytes 页数：7 Pages

VBSEMI

微碧半导体

P-Channel Enhancement Mode Field Effect Transistor

General Description The AOU417 uses advanced trench technology to provide excellent RDS(ON), and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard product AOU417 is Pb-free (meets ROHS & Sony 259 specifications). AOU417L is a Green Product orde

文件：164.05 Kbytes 页数：5 Pages

AOSMD

万国半导体

P-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • Load Switch • Battery Switch

文件：971.11 Kbytes 页数：8 Pages

VBSEMI

微碧半导体

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= -18A@ TC=25℃ ·Drain Source Voltage : VDSS= -30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 22mΩ(Max) @ VGS= -10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

文件：353.74 Kbytes 页数：2 Pages

ISC

无锡固电