N-Channel Enhancement Mode Field Effect Transistor

General Description The AO6408 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It offers operation over a wide gate drive range from 1.8V to 12V. It is ESD protected. This device is suitable for use as a load switch. Standard product AO6408 is Pb-free (meets ROHS

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AOSMD

万国半导体

30V N-Channel MOSFET

General Description The AON6408 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is for PWM applications. Product Summary VDS (V) = 30V ID = 25A (VGS = 10V) RDS(ON)

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AOSMD

万国半导体

Bilateral Trigger Diodes / Bidirectiomal Diode Thyristors

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ETCList of Unclassifed Manufacturers

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Standard Euro-Stacking Conductive Containers

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ETCList of Unclassifed Manufacturers

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