丝印：AO4435；Package：SOP-8；30V P-Channel Enhancement Mode MOSFET

General Features VDS = -30V I D = -12A RDS(ON)

文件：976.65 Kbytes 页数：5 Pages

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

丝印：AO4435；Package：SOP-8；30V P-Channel Enhancement Mode MOSFET

Description The uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = -30V I D = -12A RDS(ON)

文件：687.18 Kbytes 页数：5 Pages

EVVOSEMI

翊欧

丝印：AO4435；Package：SOP-8；30V P-Channel Enhancement Mode MOSFET

General Features VDS = -30V I D = -12A RDS(ON)

文件：976.65 Kbytes 页数：5 Pages

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

丝印：AO4435；Package：SOP-8；30V P-Channel Enhancement Mode MOSFET

Description The uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = -30V I D = -12A RDS(ON)

文件：687.18 Kbytes 页数：5 Pages

EVVOSEMI

翊欧

丝印：4435A；Package：SOP-8；P-Channel Enhancement Mode Power MOSFET

GENERAL FEATURES @ Vos =-30Vio=-9A @ Ros(on = 20m@Ves=10V @ Ros(on = 35mO@Ves=4.5V

文件：2.88112 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

P-Channel Enhancement Mode Field Effect Transistor

General Description The AO4435 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. -RoHS Compliant -AO4435 is Halogen Free Product Summary V

文件：174.49 Kbytes 页数：4 Pages

AOSMD

万国半导体

30V P-Channel MOSFET

General Description The AO4435 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. -RoHS Compliant -AO4435 is Halogen Free Product Summary

文件：2.09921 Mbytes 页数：5 Pages

WHXPCB

万和兴电子

P-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • Load Switch • Battery Switch

文件：1.0027 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

P-Channel MOSFET

■ Features ● VDS (V) =-30V ● ID =-10.5 A (VGS =-20V) ● RDS(ON)

文件：1.12161 Mbytes 页数：4 Pages

KEXIN

科信电子

P-Channel MOSFET

■ Features ● VDS (V) =-30V ● ID =-10.5 A (VGS =-20V) ● RDS(ON)

文件：1.84015 Mbytes 页数：4 Pages

KEXIN

科信电子